ATD250HVI [POSEICO]
PHASE CONTROL MODULE;型号: | ATD250HVI |
厂家: | POWER SEMICONDUCTORS |
描述: | PHASE CONTROL MODULE |
文件: | 总4页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
POSEICO SPA
Via Pillea 42-44, 16153 Genova - ITALY
Tel. + 39 010 8599400 - Fax + 39 010 8682006
Sales Office:
Tel. + 39 010 8599400 - sales@poseico.com
PHASE CONTROL MODULE
ATD250HVI
Repetitive voltage up to
Mean forward current
Surge current
4500 V
259 A
5,9 kA
FINAL SPECIFICATION
apr 17 - ISSUE : 02
Tj
[°C]
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V RRM
Repetitive peak reverse/off-state voltage
Non-repetitive peak reverse voltage
Repetitive peak reverse/off-state current
125
125
125
4500
4600
75
V
V
V RSM
I
I
RRM/DRM
mA
CONDUCTING
T (AV)
Mean forward current
180° sin, 50 Hz, Th=85°C, double side cooled
180° sin, 50 Hz, Tc=55°C, double side cooled
259
A
I
I
T (AV)
TSM
Mean forward current
Surge forward current
I² t
383
5,9
A
kA
Sine wave, 10 ms
without reverse voltage
125
x 103
I² t
174
3,34
A²s
V
V T
On-state voltage
Threshold voltage
On-state slope resistance
On-state current =
1600 A
25
V T(TO)
125
125
1,35
V
r
T
1,335
mohm
SWITCHING
From 75% VDRM up to 1050 A; gate 10V, 5W
di/dt
Critical rate of rise of on-state current, min.
125
200
A/µs
dv/dt
Critical rate of rise of off-state voltage, min.
Gate controlled delay time, typical
Circuit commutated turn-off time, typical
Reverse recovery charge
Linear ramp up to 70% of VDRM
125
25
500
1,6
V/µs
µs
VD=100V; gate source 25V, 10W , tr=.5 µs
t
t
d
q
dv/dt = 20 V/µs linear up to 75% VDRM
di/dt = -20 A/µs, I= 700 A
VR= 50 V
320
µs
Q rr
125
µC
A
I
I
I
rr
Peak reverse recovery current
Holding current, typical
H
VD=5V, gate open circuit
VD=5V, tp=30µs
25
25
300
700
mA
mA
L
Latching current, typical
GATE
V GT
Gate trigger voltage
VD=5V
25
3,50
V
I
GT
Gate trigger current
VD=5V
25
200
0,25
30
mA
V
V GD
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
125
V FGM
V
I
FGM
10
A
V RGM
P GM
P G
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
5
V
Pulse width 100 µs
150
2
W
W
MOUNTING
R th(j-h)
Thermal impedance, DC
Junction to case, per element
Case to heatsink, per element
70,0
°C/kW
R th(c-h)
T j
Thermal impedance
Operating junction temperature
RMS insulation voltage
Mounting torque
20,0
-30 / 125
6000
°C/kW
°C
V ins
T
50 hz , circuit to base, all terminal shorted
Case to heatsink
25
V
4 to 6
kN
kN
g
T
Mounting torque
Busbars to terminal
12 to 18
1500
Mass
ORDERING INFORMATION : ATD250HVI S 45
VRRM/100
standard specification
ATD250HVI PHASE CONTROL MODULE
FINAL SPECIFICATION apr 17 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SQUARE WAVE
Tcase [°C]
130
125
120
115
110
105
100
95
90
85
30°
60°
90° 120°
180°
DC
80
0
50
100
150
200
250
300
350
IF(AV) [A]
PF(AV) [W]
600
DC
180°
120°
500
400
300
200
100
0
90°
60°
30°
0
50
100
150
200
250
300
350
IF(AV) [A]
ATD250HVI PHASE CONTROL MODULE
FINAL SPECIFICATION apr 17 - ISSUE : 02
DISSIPATION CHARACTERISTICS
SINE WAVE
Tcase [°C]
130
125
120
115
110
105
100
95
90
85
30°
60°
90°
120°
180°
80
0
50
100
150
200
250
300
IF(AV) [A]
PF(AV) [W]
600
180°
120°
90°
60°
500
400
300
200
100
30°
0
0
50
100
150
200
250
300
IF(AV) [A]
ATD250HVI PHASE CONTROL MODULE
FINAL SPECIFICATION apr 17 - ISSUE : 02
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
900
800
700
600
500
400
300
200
100
0
7
6
5
4
3
2
1
0
0
1
2
3
1
10
100
On-State Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
80
70
60
50
40
30
20
10
0
0,001
0,01
0,1
1
10
100
t[s]
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform clamping force,
cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change any data
given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded background) and
characteristics is reported.
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