ATF530 [POSEICO]
FAST SWITCHING THYRISTOR;
| 型号： | ATF530 |
| 厂家： | 
POWER SEMICONDUCTORS |
| 描述： | FAST SWITCHING THYRISTOR 开关 |
| 文件： | 总3页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
POSEICO
POSEICO SPA
POwer SEmiconductors Italian COrporation
FAST SWITCHING THYRISTOR
ATF530
Repetitive voltage up to
Mean on-state current
Surge current
2000
1100
V
A
15 kA
50 µs
TARGET SPECIFICATION
apr 06 - ISSUE : 0
Turn-off time
Tj
Symbol
Characteristic
Conditions
Value
Unit
BLOCKING
V
V
V
I
RRM
RSM
DRM
RRM
DRM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Repetitive peak reverse current
Repetitive peak off-state current
125
125
125
125
125
2000
2100
2000
75
V
V
V
V=VRRM
V=VDRM
mA
mA
I
75
CONDUCTING
I
I
I
T (AV)
T (AV)
TSM
Mean on-state current
180°sin, 50 Hz,Th=55°C, doubl e side cooled
180°sin, 1 kHz,Tc=85°C, doub le side cooled
sine wave, 10 ms
1100
900
A
A
Mean on-state current
Surge on-state current, non repetitive
I² t
125
15
kA
I² t
without reverse voltage
1125 x1E3
2,25
A²s
V
V
V
r
T
On-state voltage
On-state current =
2000 A
25
T(TO)
T
Threshold voltage
125
1,30
V
On-state slope resistance
125 0,410
mohm
SWITCHING
di/dt
dv/dt
td
Critical rate of rise of on-state current, min
Critical rate of rise of off-state voltage, min
Gate controlled delay time, typical
From 50% VDRM
125
125
25
800
500
1,5
50
A/µs
V/µs
µs
Linear ramp up to 70% of VDRM
VD=VDRM, gate source 20V, 20 ohm , tr=0.1 µs
tq
Circuit commutated turn-off time
di/dt = 20
A/µs, I I = 800
A
125
µs
dV/dt = 200 V/µs , up to 75% VDRM
Q rr
I rr
Reverse recovery charge
Peak reverse recovery current
Holding current, typical
di/dt = 60
VR = 50
A/µs, I I = 1000
A
125
620
300
µC
A
V
I
I
H
VD=5V, gate open circuit
VD=5V, tp=30µs
25
25
500
mA
mA
L
Latching current, typical
1000
GATE
GT
V
I
Gate trigger voltage
VD=6V
25
25
125
25
25
25
25
25
3,0
150
0,3
30
10
5
V
mA
V
GT
Gate trigger current
VD=6V
V
V
I
GD
Non-trigger gate voltage, min.
Peak gate voltage (forward)
Peak gate current
VD=VDRM
FGM
FGM
RGM
GM
V
A
V
P
P
Peak gate voltage (reverse)
Peak gate power dissipation
Average gate power dissipation
V
Pulse width 100 µs
200
3
W
W
G(AV)
MOUNTING
R
R
T
F
th(j-h)
th(c-h)
j
Thermal impedance, DC
Junction to heatsink, double side cooled
Case to heatsink, double side cooled
26
6
°C/kW
°C/kW
°C
Thermal impedance, DC
Operating junction temperature
Mounting force
-30 / 125
14.0 / 17.0
500
kN
Mass
g
tq code
D 10 µs C 12 µs B 15 µs A 20 µs L 25 µs
M 30 µs N 35 µs P 40 µs R 45 µs S 50 µs
T 60 µs U 70 µs W 80 µs X 100µs Y 150µs
tq code
ORDERING INFORMATION : ATF530 S 20 S
VDRM&VRRM/100
standard specification
POSEICO
ATF530 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION apr 06 - ISSUE : 0
SWITCHING CHARACTERISTICS
REVERSE RECOVERY CHARGE
Tj = 125 °C
1800
1600
1400
1200
1000
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
REVERSE RECOVERY CURRENT
Tj = 125 °C
1000
800
600
400
200
0
1000 A
500 A
250 A
0
50
100
150
200
250
300
350
400
di/dt [A/µs]
di/dt
ta = Irr / (di/dt)
Softness (s factor) s = tb / ta
Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 )
tb = trr - ta
IF
ta
tb
Irr
Vr
POSEICO
ATF530 FAST SWITCHING THYRISTOR
POSEICO SPA
POwer SEmiconductors Italian COrporation
TARGET SPECIFICATION apr 06 - ISSUE : 0
ON-STATE CHARACTERISTIC
Tj = 125 °C
SURGE CHARACTERISTIC
Tj = 125 °C
3500
3000
2500
2000
1500
1000
500
16
14
12
10
8
6
4
2
0
0
0,6
1,1
1,6
2,1
2,6
1
10
100
On-state Voltage [V]
n° cycles
TRANSIENT THERMAL IMPEDANCE
DOUBLE SIDE COOLED
35
30
25
20
15
10
5
0
0,001
0,01
0,1
1
10
t[s]
Cathode terminal type DIN 46244 - A 4.8 - 0.8
Gate terminal type AMP 60598 - 1
Distributed by
All the characteristics given in this data sheet are guaranteed only with uniform
clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm
and roughness < 2 µm.
In the interest of product improvement POSEICO SpA reserves the right to change
any data given in this data sheet at any time without previous notice.
If not stated otherwise the maximum value of ratings (simbols over shaded
background) and characteristics is reported.
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