5961-01-526-6665 [POWEREX]
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES;
| 型号： | 5961-01-526-6665 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES 栅 |
| 文件： | 总4页 (文件大小：60K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CM150DY-12H
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Dual IGBTMOD™
H-Series Module
150 Amperes/600 Volts
A
B
H
E
E
H
S
C2E1
E2
C1
G
K
C
S
L
Description:
R - M5 THD (3 TYP.)
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
P - DIA. (2 TYP.)
.110 TAB
J
J
J
N
N
M
D
F
Q
Features:
□ Low Drive Power
G2
E2
□ Low V
CE(sat)
□ Discrete Super-Fast Recovery
(70ns) Free Wheel Diode
C2E1
E2
C1
□ High Frequency Operation
(20-25kHz)
□ Isolated Baseplate for Easy
E1
G1
Heat Sinking
Applications:
□ AC Motor Control
Outline Drawing and Circuit Diagram
□ Motion/Servo Control
□ UPS
□ Welding Power Supplies
□ Laser Power Supplies
Dimensions
Inches
3.70
Millimeters
94.0
Dimensions
Inches
0.51
Millimeters
13.0
12.0
7.5
A
B
C
D
E
F
K
L
3.150±0.01
1.89
80.0±0.25
48.0
0.47
M
N
P
Q
R
S
0.30
Ordering Information:
1.18 Max.
0.90
30.0 Max.
23.0
0.28
7.0
Example: Select the complete part
module number you desire from
the table below -i.e. CM150DY-12H
0.256 Dia.
0.26
Dia. 6.5
6.5
0.83
21.2
is a 600V (V
Dual IGBTMOD™ Power Module.
), 150 Ampere
G
H
J
0.71
18.0
M5 Metric
0.16
M5
CES
0.67
17.0
4.0
Type
Current Rating
Amperes
V
CES
0.63
16.0
Volts (x 50)
CM
150
12
237
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
Absolute Maximum Ratings, T = 25 °C unless otherwise specified
j
Ratings
Symbol
CM150DY-12H
–40 to 150
–40 to 125
600
Units
°C
Junction Temperature
T
j
Storage Temperature
T
°C
stg
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage
V
CES
V
GES
Volts
±20
Volts
Collector Current
I
150
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
C
Peak Collector Current
I
I
300*
CM
Diode Forward Current
I
150
F
Diode Forward Surge Current
Power Dissipation
300*
FM
P
600
d
Max. Mounting Torque M5 Terminal Screws
Max. Mounting Torque M6 Mounting Screws
Module Weight (Typical)
–
17
–
–
26
in-lb
270
Grams
Volts
V Isolation
V
2500
RMS
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
1.0
0.5
7.5
2.8**
–
Units
mA
Collector-Cutoff Current
Gate Leakage Current
I
V
V
= V
, V
CES GE
= 0V
= 0V
CES
GES
CE
I
= V
, V
GES CE
–
–
µA
GE
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
V
I
C
= 15mA, V
= 10V
= 15V
4.5
–
6.0
2.1
2.15
450
–
Volts
Volts
Volts
nC
GE(th)
CE
GE
V
I = 150A, V
C
CE(sat)
I
= 150A, V
= 15V, T = 150°C
–
C
GE
j
Total Gate Charge
Q
V
= 300V, I = 150A, V
= 15V
–
–
G
CC
C
GS
Diode Forward Voltage
V
I
= 150A, V
= 0V
–
2.8
Volts
FM
E GS
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Min.
–
Typ.
–
Max.
Units
nF
nF
nF
ns
Input Capacitance
C
ies
15
Output Capacitance
Reverse Transfer Capacitance
C
oes
V
= 0V, V
GE CE
= 10V, k = 1MHz
–
–
5.3
C
–
–
3
200
550
300
300
110
–
res
Resistive
Load
Turn-on Delay Time
t
–
–
d(on)
Rise Time
t
r
V
= 300V, I = 150A,
–
–
ns
CC
C
Switching
Times
Turn-off Delay Time
Fall Time
t
V
= V
= 15V, R = 4.2Ω
–
–
ns
d(off)
GE1
GE2
G
t
f
–
–
ns
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
t
rr
I
I
= 150A, di /dt = –300A/µs
–
–
ns
E
E
Q
= 150A, di /dt = –300A/µs
–
0.41
µC
rr
E
E
Thermal and Mechanical Characteristics, T = 25 °C unless otherwise specified
j
Characteristics
Symbol
Test Conditions
Per IGBT
Min.
–
Typ.
–
Max.
0.21
0.47
0.065
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
R
th(j-c)
R
th(j-c)
R
th(c-f)
Per FWDi
–
–
Per Module, Thermal Grease Applied
–
–
238
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
300
250
200
150
100
300
250
200
150
100
50
5
4
3
2
1
0
V
= 20V
T = 25oC
j
12
GE
V
= 10V
V
= 15V
GE
CE
15
T = 25°C
T = 25°C
j
j
T = 125°C
j
T = 125°C
j
11
10
9
8
50
0
7
0
0
2
4
6
8
10
0
4
8
12
16
20
0
100
200
300
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-CURRENT, I , (AMPERES)
GATE-EMITTER VOLTAGE, V , (VOLTS)
CE
C
GE
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
(TYPICAL)
CE
3
10
2
10
10
8
T = 25°C
j
T = 25°C
j
I
= 300A
C
C
C
ies
1
0
10
6
I
= 150A
C
2
10
oes
4
10
2
V
= 0V
GE
f = 1MHz
I
= 60A
16
C
C
res
1
10
-1
10
0
10
-1
0
10
1
10
2
10
0
4
8
12
20
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V , (VOLTS)
GATE-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
EC
GE
CE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE, V
GE
3
3
2
1
0
10
10
10
10
10
20
16
12
8
t
f
V
= 200V
CC
t
d(off)
t
d(on)
I
V
= 300V
rr
CC
2
10
2
10
t
r
t
rr
V
V
= 300V
= ±15V
= 4.2Ω
CC
GE
4
R
di/dt = -300A/µsec
T = 125°C
j
G
T = 125°C
j
1
10
1
10
0
10
1
2
3
10
1
2
10
3
10
10
10
0
100 200 300 400 500 600
COLLECTOR CURRENT, I , (AMPERES)
EMITTER CURRENT, I , (AMPERES)
GATE CHARGE, Q , (nC)
C
E
G
239
Powerex, Inc., 200 Hillis Street,Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM150DY-12H
Dual IGBTMOD™ H-Series Module
150 Amperes/600 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
-3
10
-2
10
-1
0
10
1
10
-3
10
-2
-1
10
0
10
1
10
10
10
1
1
10
10
Single Pulse
= 25°C
Per Unit Base = R
Single Pulse
T
T
= 25°C
C
C
= 0.21°C/W
Per Unit Base = R
= 0.47°C/W
th(j-c)
th(j-c)
0
10
0
10
-1
-2
-3
-1
-2
-3
-1
10
-2
10
-3
10
-1
-2
-3
10
10
10
10
10
•(NORMIZDVALUE)
(•NORMZIDAVUL)E
th
ht
=R
R=
10
10
th
ht
Z
Z
10
-3
10
10
-3
10
-5
-4
10
-5
-4
10
10
10
TIME, (s)
TIME, (s)
240
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