CM450DX-24S [POWEREX]
Dual IGBT NX-Series Module 450 Amperes/1200 Volts; 双IGBT NX系列模块450安培/ 1200伏
| 型号： | CM450DX-24S |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Dual IGBT NX-Series Module 450 Amperes/1200 Volts |
| 文件： | 总9页 (文件大小：1178K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CM450DX-24S
Dual IGBT
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
NX-Series Module
450 Amperes/1200 Volts
AR
AS
AP
A
D
E
F
AN
AQ
DETAIL "A"
J
J
G
S
Y
H
AE
(4 PLACES)
AF
L
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
Q
R
Q
K
47
48
24
23
S
S
T
U
U
AA
AB
B
Z
T
DETAIL "B"
10 11 12 13 14 15 16 17 18 19 20 21 22
AG
1
2
3
4
5
6
7
8
9
AY
W
AJ
N
P
K
Description:
X
V
K
AH
AC (4 PLACES)
AL
M
AD
Powerex IGBT Modules are
designed for use in switching
applications. Each module
AT
AU
AV
AM
C
AW
AK
DETAIL "A"
consists of two IGBT Transistors
in a half-bridge configuration with
each transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated from
the heat sinking baseplate, offering
simplified system assembly and
thermal management.
C2E1(24) C2E1(23)
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
AX
Th
NTC
Cs1(22)
0ꢀ5 to
3
6
0ꢀ2
0ꢀ3
0ꢀ5
0ꢀ8
1ꢀ2
over
over
3
6
to
to 30
Tr2
Es1(16)
G1(15)
Di1
TH1
(1)
TH2
(2)
Di2
Tr1
over 30 to 120
over 120 to 400
G2(38)
Es2(39)
DETAIL "B"
The tolerance of size between
terminals is assumed to 0ꢀ4
E2
(47)
C1
(48)
Outline Drawing and Circuit Diagram
Dimensions
Inches
5.98
Millimeters
152.0
62.0
Dimensions
AA
Inches
Millimeters
50.0 0.5
57.5
Features:
£ Low Drive Power
A
B
C
D
E
F
1.97 0.02
2.26
2.44
AB
£ Low V
CE(sat)
0.67+0.04/-0.02
5.39
17.0+1.0/-0.5
137.0
121.7
110.0 0.5
99.0
AC
AD
AE
0.22 Dia.
0.6
5.5 Dia.
15.0
£ Discrete Super-Fast Recovery
Free-Wheel Diode
4.79
0.51
13.0
£ Isolated Baseplate for Easy
Heat Sinking
4.33 0.02
3.89
AF
0.27
7.0
G
H
J
AG
AH
AJ
0.03
0.8
Applications:
3.72
94.5
0.81
20.5
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
0.53
13.5
0.12
3.0
K
L
0.15
3.81
AK
0.14
3.5
1.64
41.66
7.75
AL
0.26
6.5
M
N
P
Q
R
S
T
0.30
AM
AN
AP
0.53
13.5
Ordering Information:
1.95
49.53
22.86
14.0
0.15
3.81
Example: Select the complete
module number you desire from
the table below -i.e.
CM450DX-24S is a 1200V (V
450 Ampere Dual IGBT Power
Module.
0.9
0.05
1.15
0.55
AQ
AR
AS
0.025
0.29
0.65
0.87
22.0
7.4
),
CES
0.67
17.0
0.05
1.2
0.48
12.0
AT
0.17 Dia.
0.102 Dia.
0.088 Dia.
0.12
4.3 Dia.
2.6 Dia.
2.25 Dia.
3.0
U
V
W
X
Y
Z
0.24
6.0
AU
0.16
4.2
AV
Type
Current Rating
Amperes
V
CES
Volts (x 50)
0.37
6.5
AW
AX
0.83
21.14
M6
0.49
12.5
CM
450
24
M6
AY
0.14
3.75
1.53
39.0
05/13 Rev. 5
1
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
Absolute Maximum Ratings, T = 25°C unless otherwise specified
j
Inverter Part IGBT/FWDi
Characteristics
Symbol
Rating
1200
20
Units
Volts
Collector-Emitter Voltage (V
GE
= 0V)
V
CES
Gate-Emitter Voltage (V = 0V)
CE
V
GES
Volts
Collector Current (DC, T = 119°C)*2,*4
I
450
Amperes
Amperes
Watts
C
C
Collector Current (Pulse)*3
I
900
CRM
Total Power Dissipation (T = 25°C)*2,*4
P
3405
450
C
tot
Emitter Current (T = 25°C)*2
C
Emitter Current (Pulse)*3
I
Amperes
Amperes
*1
E
*1
I
900
ERM
Module
Characteristics
Symbol
Rating
2500
Units
Volts
°C
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature, Instantaneous Event (Overload)
Maximum Case Temperature*4
V
ISO
T
175
j(max)
T
125
°C
C(max)
Operating Junction Temperature, Continuous Operation (Under Switching)
Storage Temperature
T
-40 to +150
-40 to +125
°C
j(op)
T
°C
stg
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
*2 Junction temperature (T ) should not increase beyond maximum junction
j
47
48
24
23
temperature (T
) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T )
26.3
42.4
27.7
j(max)
Di2
Tr1
Di2
Tr1
Di2
27.8
43.9
Tr2
Di1
29.2
43.4
Tr2
Tr2
j
43.0
51.5
does not exceed T
rating.
j(max)
*4 Case temperature (T ) and heatsink temperature (T ) is measured on the surface
Di1 Tr1 Di1
Th
C
s
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
LABEL SIDE
The heatsink thermal resistance should be measured just under the chips.
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
2
05/13 Rev. 5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
Electrical Characteristics, T = 25°C unless otherwise specified
j
Inverter Part IGBT/FWDi
Characteristics
Symbol
Test Conditions
= V , V = 0V
Min.
Typ.
Max.
Units
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
I
V
—
—
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.0
0.5
6.6
2.25
—
mA
µA
CES
CE
CES GE
= V , V = 0V
I
V
GE
GES
GES CE
V
GE(th)
I
= 45mA, V = 10V
6.0
1.80
2.00
2.05
1.70
1.90
1.95
—
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
C
CE
= 15V, T = 25°C*5
V
I
= 450A, V
GE
CE(sat)
C
j
(Terminal)
I
I
= 450A, V
= 15V, T = 125°C*5
C
GE
GE
j
= 450A, V
= 15V, T = 150°C*5
j
—
C
I
Collector-Emitter Saturation Voltage
V
= 450A, V
GE
= 15V, T = 25°C*5
2.15
—
CE(sat)
C
j
(Chip)
I
I
= 450A, V
= 15V, T = 125°C*5
C
C
GE
GE
j
= 450A, V
= 15V, T = 150°C*5
j
—
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
C
ies
45
C
oes
V
= 10V, V
CE GE
= 0V
—
9.0
0.75
—
nF
C
—
nF
res
Q
G
V
CC
= 600V, I = 450A, V
GE
= 15V
1050
—
nC
C
Turn-on Delay Time
Rise Time
t
800
200
600
300
2.25
—
ns
d(on)
t
r
V
= 600V, I = 450A, V
GE
= 15V,
—
ns
CC
C
Turn-off Delay Time
Fall Time
t
R
= 0Ω, Inductive Load
G
—
ns
d(off)
t
—
ns
f
*1
Emitter-Collector Voltage
V
EC
I
= 450A, V
= 0V, T = 25°C*5
GE j
1.80
1.80
1.80
1.70
1.70
1.70
—
Volts
Volts
Volts
Volts
Volts
Volts
ns
E
(Terminal)
I
E
= 450A, V
= 0V, T = 125°C*5
GE
j
I
E
= 450A, V
= 0V, T = 150°C*5
j
—
GE
*1
V
Emitter-Collector Voltage
I
= 450A, V
= 0V, T = 25°C*5
2.15
—
EC
E
GE j
(Chip)
I
E
= 450A, V
= 0V, T = 125°C*5
j
GE
GE
I
E
= 450A, V
= 0V, T = 150°C*5
—
j
*1
Reverse Recovery Time
t
rr
V
CC
= 600V, I = 450A, V
= 15V
= 0Ω, Inductive Load
G
300
—
E
GE
*1
Reverse Recovery Charge
Q
R
24
µC
rr
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
E
E
V
= 600V, I = I = 450A, V
GE
= 15V
54.9
48.0
32.4
—
—
mJ
on
CC
C
E
R
= 0Ω, T = 150°C
—
mJ
off
*1
G
j
E
rr
Inductive Load
Main Terminals-Chip,
—
mJ
R
0.7
mΩ
CC' + EE'
Per Switch,T = 25°C*4
C
Internal Gate Resistance
r
g
Per Switch
—
4.3
—
Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector free wheeling
diode (FWDi).
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
*4 Case temperature (T ) and heatsink temperature (T ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Pulse width and repetition rate should be such as to cause negligible temperature rise.
C
s
47
48
24
23
26.3
27.7
Di2
Tr1
Di2
Tr1
Di2
27.8
Tr2
Di1
29.2
Tr2
Tr2
42.4
43.0
43.4
43.9
Di1 Tr1 Di1
Th
51.5
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
LABEL SIDE
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
05/13 Rev. 5
3
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
Electrical Characteristics, T = 25°C unless otherwise specified (continued)
j
NTC Thermistor Part
Characteristics
Symbol
Test Conditions
= 25°C*4
Min.
4.85
-7.3
—
Typ.
5.00
—
Max.
5.15
+7.8
—
Units
kΩ
%
Zero Power Resistance
Deviation of Resistance
B Constant
R
25
T
C
∆R/R
T
= 100°C*4, R
= 493Ω
C
100
B
Approximate by Equation*6
= 25°C*4
3375
—
K
(25/50)
Power Dissipation
P
25
T
—
10
mW
C
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4
Thermal Resistance, Junction to Case*4
Contact Thermal Resistance,
R
R
Q
IGBT Part
FWDi Part
—
—
—
—
15
44
78
—
K/kW
K/kW
K/kW
th(j-c)
D
th(j-c)
R
Thermal Grease Applied,
Per 1 Module*7
—
th(c-f)
Case to Heatsink*4
Mechanical Characteristics
Mounting Torque
M
Main Terminals, M6 Screw
Mounting to Heatsink, M5 Screw
Terminal to Terminal
31
22
35
27
—
40
31
—
in-lb
in-lb
mm
t
Mounting Torque
M
s
Creepage Distance
d
11.55
12.32
10.00
10.85
—
s
Terminal to Baseplate
—
—
mm
Clearance
d
a
Terminal to Terminal
—
—
mm
Terminal to Baseplate
—
—
mm
Weight
m
350
—
—
Grams
µm
Flatness of Baseplate
e
c
On Centerline X, Y*8
0
100
Recommended Operating Conditons, T = 25°C
a
DC Supply Voltage
V
Applied Across P-N Terminals
Applied Across
—
600
850
Volts
Volts
CC
Gate-Emitter Drive Voltage
V
13.5
15.0
16.5
GE(on)
G*P-Es*P/G*N-Es*N Terminals
Per Switch
External Gate Resistance
R
G
0
—
10
Ω
*4 Case temperature (T ) and heatsink temperature (T ) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
C
s
0
0
46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25
47
48
24
23
The heatsink thermal resistance should be measured just under the chips.
26.3
42.4
27.7
Di2
Tr1
Di2
Tr1
Di2
27.8
Tr2
Di1
29.2
Tr2
Tr2
R
1
1
25
)/(
*6 B
= In(
–
)
(25/50)
43.0
43.4
R
T
T
50
50
25
43.9
Di1 Tr1 Di1
Th
51.5
R
R
; Resistance at Absolute Temperature T [K]; T = 25 [°C] + 273.15 = 298.15 [K]
; Resistance at Absolute Temperature T [K]; T = 50 [°C] + 273.15 = 323.15 [K]
50 50
25
25 25
1
2
3
4
5
6
7
8
9
10 11 12 13 14 15 16 17 18 19 20 21 22
50
LABEL SIDE
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
*8 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
Tr1 / Tr2: IGBT, Di1 / Di2: FWDi, Th: NTC Thermistor
Each mark points to the center position of each chip.
Y
X
– : CONCAVE
+ : CONVEX
HEATSINK SIDE
4
05/13 Rev. 5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
900
800
700
600
500
400
300
200
100
0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T = 25°C
V
=
20V
j
15
13.5
V
= 15V
GE
GE
T = 25°C
12
11
j
T = 125°C
j
T = 150°C
j
10
9
0
0
2
4
6
8
10
0 100 200300 400 500 600 700 800 900
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
COLLECTOR-CURRENT, I , (AMPERES)
CE
C
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
103
10
T = 25°C
j
8
I
= 900A
= 450A
C
6
I
C
102
4
I
= 180A
V
= 15V
C
GE
T = 25°C
j
2
T = 125°C
j
T = 150°C
j
0
101
6
8
10 12 14 16 18 20
0
0.5 1.0
1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V , (VOLTS)
GATE-EMITTER VOLTAGE, V , (VOLTS)
EC
GE
05/13 Rev. 5
5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
(TYPICAL)
CE
103
102
101
100
C
ies
t
d(off)
t
d(on)
t
f
102
C
oes
V
V
R
= 600V
CC
=
1ꢀV
GE
C
t
res
r
= 0Ω
G
T = 12ꢀ°C
Inductive Load
j
V
= 0V
GE
10-1
101
10-1
100
101
102
101
102
103
COLLECTOR CURRENT, I , (AMPERES)
COLLECTOR-EMITTER VOLTAGE, V , (VOLTS)
C
CE
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
103
t
d(off)
t
t
d(on)
t
d(off)
f
t
r
t
d(on)
t
f
102
102
V
V
I
= 600V
CC
V
V
R
= 600V
CC
=
1ꢀV
GE
=
1ꢀV
GE
t
r
= 4ꢀ0A
C
= 0Ω
G
T = 12ꢀ°C
j
T = 1ꢀ0°C
j
Inductive Load
Inductive Load
101
101
101
10-1
100
101
102
102
103
EXTERNAL GATE RESISTANCE, R , (Ω)
COLLECTOR CURRENT, I , (AMPERES)
G
C
6
05/13 Rev. 5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
101
103
t
d(off)
t
d(on)
t
r
t
f
102
V
V
R
= 600V
CC
=
1ꢀV
GE
= 0Ω
G
V
V
I
= 600V
=
= 4ꢀ0A
CC
GE
T = 12ꢀ°C
j
1ꢀV
Inductive Load
C
I
rr
T = 1ꢀ0°C
j
t
rr
Inductive Load
101
10-1
100
101
102
101
102
103
EXTERNAL GATE RESISTANCE, R , (Ω)
EMITTER CURRENT, I , (AMPERES)
G
E
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
GATE CHARGE VS. V
GE
103
20
1ꢀ
10
ꢀ
V
I
= 600V
= 4ꢀ0A
CC
C
102
V
V
R
= 600V
CC
=
1ꢀV
GE
= 0Ω
G
T = 1ꢀ0°C
j
Inductive Load
I
rr
t
rr
101
101
0
102
103
ꢀ00
1000
1ꢀ00
0
EMITTER CURRENT, I , (AMPERES)
GATE CHARGE, Q , (nC)
E
G
05/13 Rev. 5
7
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
102
102
V
V
= 600V
V
V
= 600V
= 1ꢀV
CC
CC
=
1ꢀV
GE
GE
R
= 0Ω
R = 0Ω
G
G
T = 12ꢀ°C
T = 1ꢀ0°C
j
j
101
101
E
E
on
on
E
E
off
off
E
E
rr
rr
100
100
101
102
103
101
102
103
COLLECTOR CURRENT, I , (AMPERES)
EMITTER CURRENT, I , (AMPERES)
COLLECTOR CURRENT, I , (AMPERES)
EMITTER CURRENT, I , (AMPERES)
C
C
E
E
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
102
103
102
V
V
= 600V
CC
GE
V
V
= 600V
CC
GE
=
1ꢀV
=
1ꢀV
I /I = 4ꢀ0A
C E
I /I = 4ꢀ0A
C E
T = 12ꢀ°C
j
T = 1ꢀ0°C
j
101
101
E
E
on
on
E
E
off
off
E
E
rr
rr
100
100
10-1
100
101
102
10-1
101
102
100
GATE RESISTANCE, R , (Ω)
GATE RESISTANCE, R , (Ω)
G
G
8
05/13 Rev. 5
Powerex, Inc., 173 Pavilion Lane,Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM450DX-24S
Dual IGBT NX-Series Module
450 Amperes/1200 Volts
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-1
Single Pulse
T
= 25°C
C
Per Unit Base =
R
R
=
th(j-c)
10-2
10-3
0.44°K/kW
(IGBT)
=
th(j-c)
0.78°K/kW
(FWDi)
10-5 10-4 10-3 10-2 10-1 100 101
TIME, (s)
05/13 Rev. 5
9
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