CT20TM-8 [POWEREX]
STROBE FLASHER USE; 频闪闪光器使用
| 型号： | CT20TM-8 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | STROBE FLASHER USE |
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20TM-8
STROBE FLASHER USE
CT20TM-8
OUTLINE DRAWING
Dimensions in mm
10.5MAX.
5.2
2.8
φ 3.2
1.3MAX.
0.8
2.54
2.54
0.5
2.6
q w e
w
q GATE
q
w COLLECTOR
e EMITTER
¡VCES ............................................................................... 400V
¡ICM ................................................................................... 130A
e
TO-220F
APPLICATION
Strobe Flasher.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
ICM
Parameter
Conditions
Ratings
Unit
Collector-emitter voltage
Gate-emitter voltage
VGE = 0V
400
±30
V
V
VCE = 0V, See notice 4
VCE = 0V, tw = 0.5s
See figure 1
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
±40
V
130
A
Tj
–40 ~ +150
–40 ~ +150
°C
°C
Tstg
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol Parameter
Limits
Typ.
—
Test conditions
Unit
Min.
Max.
—
V(BR)CES Collector-emitter breakdown voltage IC = 1mA, VGE = 0V
450
—
V
µA
µA
V
ICES
Collector-emitter leakage current VCE = 400V, VGE = 0V
Gate-emitter leakage current VGE = ±40V, VCE = 0V
Gate-emitter threshold voltage VCE = 10V, IC = 1mA
—
10
IGES
—
—
±0.1
7.0
VGE(th)
—
—
Feb.1999
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20TM-8
STROBE FLASHER USE
PERFORMANCE CURVES
MAXIMUM PULSE COLLECTOR CURRENT
MAXIMUM PULSE COLLECTOR CURRENT
200
160
120
80
2000
CM
= 800µF
1600
1200
800
<
50°C
=
T
C
V
CM = 350V
40
400
0
<
70°C
=
<
70°C
=
T
C
T
C
>
V
GE 28V
=
0
0
10
20
30
40
50
60
80
100
120
140
160
GATE-EMITTER VOLTAGE
V
GE (V)
PULSE COLLECTOR CURRENT
I
CP (A)
Figure 1
Figure 2
APPLICATION EXAMPLE
TRIGGER
SIGNAL
Vtrig
IXe
CM
+
–
Vtrig
IGBT GATE
VOLTAGE
VG
V
CM
RG
V
CE
Ixe
Xe TUBE
CURRENT
V
G
IGBT
RECOMMEND CONDITION
MAXIMUM CONDITION
V
CM = 330V
360V
130A
800µF
I
P = 120A
C
M
= 700µF
V
GE = 28V
Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current.
And reverse gate current during turn-off must be kept less than 1A.
(In general, it is satisfied if RG ≥ 30Ω)
Notice 2. IGBT has MOS structure and its gate is insulated by thin silicon oxide.
So please handle carefully not to suffer from electrostatic charge.
Notice 3. The operation life should be endured 5,000 shots under the charge current
(Ixe ≤ 130A : full luminescence condition) of main condenser (CM=800µF).
Repetition period under full luminescence condition is over 3 seconds.
Notice 4. Total operation hours must be applied within 5,000 hours.
Feb.1999
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