FL7KM-12A [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FL7KM-12A |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
FL7KM-12A
OUTLINE DRAWING
Dimensions in mm
10 ± 0.3
2.8 ± 0.2
φ 3.2 ± 0.2
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
2.54 ± 0.25
0.75 ± 0.15
2.54 ± 0.25
➀ ➁ ➂
➁
➀
➁
➂
GATE
DRAIN
SOURCE
➀
● 10V DRIVE
● VDSS ............................................................................... 600V
● rDS (ON) (MAX) ................................................................ 1.3Ω
● ID ........................................................................................... 7A
➂
TO-220FN
APPLICATION
Switch mode power supply, Inverter fluorescent
lamp, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
600
±30
V
7
A
IDM
Drain current (Pulsed)
21
7
A
IDA
Avalanche drain current (Pulsed) L = 200µH
Maximum power dissipation
Channel temperature
A
PD
35
W
°C
°C
V
Tch
–55 ~ +150
–55 ~ +150
2000
Tstg
Viso
—
Storage temperature
Isolation voltage
Weight
AC for 1minute, Terminal to case
Typical value
2.0
g
Sep.1998
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
600
±30
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
V
(BR) DSS Drain-source breakdown voltage
(BR) GSS Gate-source breakdown voltage
V
V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 600V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 3A, VGS = 10V
ID = 3A, VGS = 10V
ID = 3A, VDS = 10V
IGSS
IDSS
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
—
—
±10
1
µA
mA
V
—
VGS (th)
rDS (ON)
VDS (ON)
yfs
2.0
—
3.0
1.1
3.3
5.0
950
115
30
4.0
1.3
3.9
—
Ω
—
V
—
S
Ciss
—
—
pF
pF
pF
ns
ns
ns
ns
V
VDS = 25V, VGS = 0V, f = 1MHz
Coss
Crss
Output capacitance
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
20
—
Rise time
—
30
—
VDD = 200V, ID = 3A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
180
65
—
Fall time
—
—
IS = 3A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.5
—
2.0
3.57
Rth (ch-c)
—
°C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
50
40
30
20
10
0
5
3
2
tw = 10µs
100µs
101
7
5
3
2
1ms
100
7
5
10ms
3
2
TC = 25°C
Single Pulse
10–1
7
5
DC
0
50
100
150
200
3
5 7101 2 3 5 7102 2 3 5 7103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
16
12
8
10
8
TC = 25°C
Pulse Test
PD = 35W
VGS = 20V
10V
6V
5V
VGS = 20V
10V
6V
4.5V
6
5V
PD = 35W
4
4.5V
4V
4
2
4V
TC = 25°C
Pulse Test
0
0
0
10
20
30
40
50
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
40
32
24
16
8
5
4
3
2
1
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
I
D
= 12A
V
GS = 10V
7A
3A
0
0
0
3
4
8
12
16
20
100
2
3
4 5
7
101
2
3
4 5
7
102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT
ID
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
8
101
7
5
4
3
2
TC = 25°C
75°C
125°C
100
7
5
4
3
4
T
C
= 25°C
DS = 50V
Pulse Test
2
V
V
DS = 10V
Pulse Test
0
10–1
4
8
12
16 20
10–1
2
3
4 5
7
100
2
3
4 5
101
7
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
t
d(off)
3
2
102
7
t
t
f
Ciss
103
7
5
5
4
3
r
3
2
2
t
d(on)
102
7
5
Coss
Crss
101
7
T
C
h = 25°C
f = 1MH
GS = 0V
T
V
V
C
h = 25°C
DD = 200V
GS = 10V
3
2
5
4
3
Z
V
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
2
3
4 5
7
100
2
3
4 5
7
101
2
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT
ID
(A)
Sep.1998
MITSUBISHI Nch POWER MOSFET
FL7KM-12A
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
T
C
h = 25°C
V
GS = 0V
I
D = 7A
Pulse Test
TC = 125°C
75°C
25°C
V
DS = 100V
200V
400V
4
4
0
0
0
20
40
60
80
(nC)
100
0
0.8
1.6
2.4
3.2
4.0
GATE CHARGE
Qg
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
= 3.5A
Pulse Test
V
DS = 10V
ID = 1mA
I
D
5
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
101
7
5
V
I
GS = 0V
D = 1mA
D = 1.0
3
2
0.5
0.2
100
7
5
0.1
0.05
3
2
P
DM
10–1
tw
7
5
T
0.02
0.01
Single Pulse
tw
D
=
3
2
T
10–2
–50
0
50
100
150
10–42 3 5710–32 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
CHANNEL TEMPERATURE Tch (°C)
PULSE WIDTH tw (s)
Sep.1998
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