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元器件品牌
FS100KMJ-03
[POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
元器件型号：
FS100KMJ-03
生产厂家：
POWEREX POWER SEMICONDUCTORS
描述和应用：
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
N沟道功率MOSFET的高速开关使用
晶体 开关 晶体管 功率场效应晶体管 脉冲 局域网
PDF文件：
总4页 (文件大小：49K)
下载文档：
下载PDF数据表文档文件
型号参数：FS100KMJ-03参数
查看货源
FS100KMJ-03F
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 100A I(D) | SOT-186
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18
ETC
FS100KMJ-03F
High-Speed Switching Use Nch Power MOS FET
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15
RENESAS
FS100KMJ-03F-A8
High-Speed Switching Use Nch Power MOS FET
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10
RENESAS
FS100R06KE3
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode
Warning
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156
-
53
EUPEC
FS100R06KE3BOSA1
Insulated Gate Bipolar Transistor, 600V V(BR)CES, N-Channel, ECONOPACK-35
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1
INFINEON
FS100R06KF
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
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17
ETC
FS100R06KF2
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
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15
ETC
FS100R06KF3
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 100A I(C)
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13
ETC
FS100R07N2E4
EconoPACK2 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC
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67
INFINEON
FS100R07N2E4B11BOSA1
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-25
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156
-
0
INFINEON
FS100R07N2E4BOSA1
Insulated Gate Bipolar Transistor
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156
-
0
INFINEON
FS100R07N3E4_B11
EconoPACK3 module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / NTC
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156
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14
INFINEON
FS100R07PE4BOSA1
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-20
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0
INFINEON
FS100R12KE3
IGBT-modules
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156
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146
EUPEC
FS100R12KE3
Technische Information / technical information
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EUPEC
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