FS50SM-2 [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FS50SM-2 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：48K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
FS50SM-2
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
r
f 3.2
2
4.4
G
1.0
5.45
q
w
e
5.45
0.6
2.8
4
w r
¡10V DRIVE
q GATE
w DRAIN
e SOURCE
r DRAIN
¡VDSS ................................................................................100V
¡rDS (ON) (MAX) .............................................................. 55mΩ
¡ID ......................................................................................... 50A
¡Integrated Fast Recovery Diode (TYP.) ...........105ns
q
e
TO-3P
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
100
±20
V
50
A
IDM
IDA
Drain current (Pulsed)
200
A
Avalanche drain current (Pulsed) L = 50µH
Source current
50
50
A
IS
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
200
A
PD
70
W
°C
Tch
Tstg
—
–55 ~ +150
–55 ~ +150
4.8
Storage temperature
°C
g
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
100
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 100V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 25A, VGS = 10V
ID = 25A, VGS = 10V
ID = 25A, VDS = 10V
—
±0.1
0.1
4.0
55
—
—
2.0
—
3.0
39
mΩ
V
—
0.98
33
1.38
—
—
S
Ciss
—
2300
410
185
35
—
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
—
Reverse transfer capacitance
Turn-on delay time
—
—
td (on)
tr
—
—
Rise time
—
86
—
VDD = 50V, ID = 25A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
—
100
80
—
Fall time
—
—
IS = 25A, VGS = 0V
Channel to case
VSD
Source-drain voltage
Thermal resistance
—
1.0
—
1.5
1.78
—
V
°C/W
ns
Rth (ch-c)
trr
—
IS = 50A, dis/dt = –100A/µs
Reverse recovery time
—
105
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
100
80
60
40
20
0
3
2
102
7
tw = 10ms
5
3
2
100ms
101
7
5
3
2
1ms
10ms
100
7
100ms
T
C
= 25°C
DC
5
3
Single Pulse
0
50
100
150
200
5 7100 2 3 5 7101 2 3 5 7102
2 3
3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V 10V 7V 6V
V
GS = 20V 10V
100
80
60
40
20
0
50
40
30
20
10
0
T
C
= 25°C
7V
Pulse Test
6V
5V
5V
T
C
= 25°C
Pulse Test
PD = 70W
P
D
= 70W
6
0
2
4
8
10
0
1
2
3
4
5
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5
4
3
2
1
0
100
80
60
40
20
0
T
C
= 25°C
T
C
= 25°C
Pulse Test
Pulse Test
I
D
= 80A
V
GS = 10V
20V
50A
20A
0
0
3
4
8
12
16
20
3
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN CURRENT (A)
GATE-SOURCE VOLTAGE
V
GS (V)
ID
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
100
80
60
40
20
0
102
7
T
V
C
= 25°C
DS = 10V
Pulse Test
V
DS = 10V
Pulse Test
5
4
3
2
101
7
5
TC = 25°C
4
75°C
3
2
125°C
100
4
8
12
16
20
100
2
3 4 5 7 101 3 4 5 7 102
2
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
103
7
T
V
V
R
ch = 25°C
DD = 50V
GS = 10V
T
V
ch = 25°C
GS = 0V
104
7
5
3
2
5
f = 1MH
Z
4
GEN = RGS = 50Ω
3
2
Ciss
t
t
d(off)
d(on)
103
7
5
3
2
102
7
t
t
f
5
Coss
Crss
r
4
102
7
5
3
2
3
2
101
5 7100 2 3 5 7101 2 3 5 7102 2 3
DRAIN-SOURCE VOLTAGE DS (V)
100
2
3 4 5 7 101
2
3 4 5 7 102
ID (A)
V
DRAIN CURRENT
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS50SM-2
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
100
80
60
40
20
0
V
GS = 0V
T
ch = 25°C
Pulse Test
I
D = 50A
V
DS = 20V
TC = 125°C
50V
80V
75°C
25°C
4
0
0
20
40
60
80
100
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Q
g
(nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
1.4
1.2
1.0
0.8
0.6
0.4
V
I
GS = 0V
D = 1mA
5
3
2
101
7
5
3
D = 1.0
2
0.5
0.2
100
7
P
DM
5
3
0.1
0.05
0.02
0.01
tw
2
10–1
7
T
tw
D
=
5
T
3
Single Pulse
2
10–2
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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