FS5AS-06 [POWEREX]
Nch POWER MOSFET HIGH-SPEED SWITCHING USE; N沟道功率MOSFET的高速开关使用
| 型号： | FS5AS-06 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Nch POWER MOSFET HIGH-SPEED SWITCHING USE |
| 文件： | 总4页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
FS5AS-06
OUTLINE DRAWING
Dimensions in mm
6.5
0.5 ± 0.1
5.0 ± 0.2
r
1.0
A
0.9MAX.
0.5 ± 0.2
2.3 2.3
0.8
q
w
e
w r
q GATE
w DRAIN
e SOURCE
r DRAIN
¡10V DRIVE
q
¡VDSS .................................................................................. 60V
¡rDS (ON) (MAX) .............................................................. 0.16Ω
¡ID ............................................................................................5A
¡Integrated Fast Recovery Diode (TYP.) ............. 45ns
e
MP-3
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Conditions
Ratings
Unit
V
VGS = 0V
VDS = 0V
60
±20
V
5
A
IDM
IDA
Drain current (Pulsed)
20
A
Avalanche drain current (Pulsed) L = 100µH
Source current
5
A
IS
5
20
A
ISM
Source current (Pulsed)
Maximum power dissipation
Channel temperature
A
PD
20
W
°C
Tch
Tstg
—
–55 ~ +150
–55 ~ +150
0.26
Storage temperature
°C
g
Weight
Typical value
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol Parameter
Limits
Unit
Test conditions
Min.
60
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
ID = 1mA, VGS = 0V
V
(BR) DSS Drain-source breakdown voltage
V
µA
mA
V
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 2A, VGS = 10V
ID = 2A, VGS = 10V
ID = 2A, VDS = 5V
—
±0.1
0.1
4.0
0.16
0.32
—
—
3.0
0.12
0.24
4.0
280
120
35
Ω
V
S
Ciss
—
pF
pF
pF
ns
ns
ns
ns
Coss
Crss
Output capacitance
VDS = 10V, VGS = 0V, f = 1MHz
—
Reverse transfer capacitance
Turn-on delay time
—
td (on)
tr
15
—
Rise time
8
—
VDD = 30V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
td (off)
tf
Turn-off delay time
18
—
Fall time
9
—
IS = 2A, VGS = 0V
VSD
Source-drain voltage
Thermal resistance
1.0
—
1.5
6.25
—
V
°C/W
ns
Rth (ch-c)
trr
Channel to case
IS = 5A, dis/dt = –100A/µs
Reverse recovery time
45
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
MAXIMUM SAFE OPERATING AREA
40
32
24
16
8
2
tw = 10ms
101
7
5
3
2
100ms
100
7
1ms
5
3
2
10ms
DC
10–1
7
5
TC = 25°C
3
2
Single Pulse
0
0
50
100
150
200
2 3 5 7100 2 3 5 7101 2 3 5 7102
2
CASE TEMPERATURE
T
C
(°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
V
GS = 20V
V
GS = 20V 10V 8V 7V
20
16
12
8
10
8
10V
Tc = 25°C
Pulse Test
8V
PD = 20W
6V
5V
7V
6V
6
Tc = 25°C
Pulse Test
4
4
2
5V
0
0
0
1.0
2.0
3.0
4.0
5.0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE
V
DS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
5.0
4.0
3.0
2.0
1.0
0
200
160
120
80
Tc = 25°C
Pulse Test
Tc = 25°C
Pulse Test
V
GS = 10V
20V
I
D
= 8A
5A
2A
40
0
0
0
3
4
8
12
16
20
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
8
101
7
Tc = 25°C
VDS = 5V
Pulse Test
V
DS = 10V
5
Pulse Test
4
3
2
TC = 25°C
6
75°C
100
7
125°C
4
5
4
3
2
2
0
10–1
4
8
12
16
20
100
2
3 4 5 7 101
2
3 4 5 7 102
GATE-SOURCE VOLTAGE
V
GS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
2
Tch = 25°C
Tch = 25°C
104
7
V
V
DD = 30V
GS = 10V
f = 1MH
Z
102
7
V
GS = 0V
5
3
2
RGEN = RGS = 50Ω
t
f
5
4
3
2
103
7
t
d(off)
5
3
2
t
d(on)
Ciss
101
7
t
r
102
7
5
Coss
Crss
4
5
3
2
3
2
5 7100 2 3 5 7101 2 3 5 7102 2 3
10–1
2
3 4 5 7 100
2
3 4 5 7 101
DRAIN-SOURCE VOLTAGE DS (V)
V
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS5AS-06
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
16
12
8
20
16
12
8
V
GS = 0V
Tch = 25°C
= 5A
Pulse Test
I
D
V
DS = 10V
20V
40V
TC = 125°C
75°C
25°C
4
4
0
0
0
4
8
12
16
20
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE
Qg
(nC)
SOURCE-DRAIN VOLTAGE V
SD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
7
5.0
4.0
3.0
2.0
1.0
0
V
GS = 10V
V
DS = 10V
ID = 1mA
I
D
= 1/2I
D
5
Pulse Test
4
3
2
100
7
5
4
3
2
10–1
–50
0
50
100
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
1.4
1.2
1.0
0.8
0.6
0.4
102
7
5
V
I
GS = 0V
D = 1mA
3
2
101
7
5
3
2
D = 1.0
0.5
0.2
P
DM
100
7
5
3
2
tw
0.1
0.05
0.02
0.01
T
tw
D
=
T
Single Pulse
10–1
–50
0
50
100
150
10–423 5710–323 5710–223 5710–123 57100 23 57101 23 57102
PULSE WIDTH (s)
CHANNEL TEMPERATURE Tch (°C)
tw
Feb.1999
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