JANTX2N1772A [POWEREX]
Silicon Controlled Rectifier, 4700mA I(T), 100V V(DRM);
| 型号： | JANTX2N1772A |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Silicon Controlled Rectifier, 4700mA I(T), 100V V(DRM) |
| 文件： | 总11页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation process conversion
measures necessary to comply with this
revision shall be completed by 17 January 1999
INCH-POUND
MIL-PRF-19500/168E
17 October 1998
SUPERSEDING
MIL-PRF-19500/168D
15 October 1997
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON
TYPES 2N1771A, 2N1772A, 2N1774A, 2N1776A, 2N1777A, JAN, JANTX, AND JANTXV
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNPN, silicon power, reverse-blocking triode thyristors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (similar to TO-64).
1.3 Maximum ratings.
I
1/
O
Limits
I
2/
V
T
T
d /d 3/
v t
(repetitive)
TSM
GM
op
C
STG
T
= +105 C
°
C
(180 condition angle)
°
A
A
V(pk)
10
C
°
v/ s
m
°
Min
-65
+150
-65
+150
5
Max
4.7
60
1/ This average forward current is for a maximum case temperature of +105 C, and 180 electrical degrees of conduction.
°
2/ Surge rating is non-recurrent and applies only with device in the ‘on’ conducting state. The peak rate of surge current must
not exceed 40 amperes/microsecond during the first 10 s after switching from the “off” (blocking) state to the “on”
m
(conducting) state. This time is measured from the point where the thyristor voltage has decayed to 90 percent of its initial
blocking value.
3/ T = -65 to +150 C.
°
°
C
1.4 Primary electrical characteristics.
1.4.1 Primary electrical characteristics (common to all types).
Limits
V
TM
I
H
V
GT
1/
I
1/
t
off
1/
t
on
GT
V
mA dc
25
V dc
mA dc
30
s
s
m
m
Min
Max
0.2
2.0
1.85
30
5
1/ T = -65 to +150 C.
°
°
C
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this
document should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the
end of this document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
MIL-PRF-19500/168E
1.4.2 Individual ratings.
Types
V
RRM
V
DRM
V
SRM
V(pk) 1/
50
100
200
300
V(pk)
50
100
200
300
400
V(pk) 2/
75
150
300
400
2N1771A
2N1772A
2N1774A
2N1776A
2N1777A
400
500
1/ Values apply for zero or negative gate voltage V
GK
2/ Peak reverse voltage, nonrepetitive, t = 5.0 ms maximum.
.
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include
documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has
been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements
documents cited in sections 3 and 4 of this specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
MILITARY
MIL-PRF-19500
STANDARD
MILITARY
-
Semiconductor Devices, General Specification for.
MIL-STD-129
MIL-STD-750
-
-
Military Marking.
Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Standardization
Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein (except for
related associated specifications or specification sheets), the text of this document takes precedence. Nothing in this document,
however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.3).
3.2 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in
MIL-PRF-19500.
2
MIL-PRF-19500/168E
Dimensions
Ltr
Inches
Millimeters
Notes
3
Min
.080
.300
.040
Max
Min
2.03
7.62
1.02
Max
3.45
B
CH
DT
e
.136
.400
.075
10.16
1.91
.013
.060
- - -
- - -
0.33
1.52
- - -
- - -
8
6
e
1
HF
HT
.424
.060
.700
.437
.175
.855
10.77
1.52
11.10
4.45
9
2
OAH
OD
17.78
21.72
.400
- - -
- - -
10.16
- - -
- - -
4
2
.424
10.77
OD
1
SD
SL
.1658
.400
- - -
.1697
.453
.078
.189
4.212
10.16
- - -
4.310
11.51
1.98
7
SU
UD
.163
4.14
4.80
NOTES:
1. Metric equivalents are given for general information only.
2. Device contour except on hex head and noted terminal dimensions is optional within zone defined by OD and OAH, OD
1
1
not to exceed actual HF.
3. Contour and angular orientation of terminals 1 and 2 with respect to hex portion and to each other are optional.
4. Chamfer or undercut on one or both ends of the hexagonal portion are optional.
5. Square or radius on end of terminal is optional.
6. Minimum difference in terminal lengths to establish datum line for numbering terminals.
7. Pitch diameter - thread 10-32 NF-2A (coated). Reference Handbook H28.
8. Minimum spacing between terminals.
9. Minimum diameter of seating plane.
FIGURE 1. Physical dimensions of thyristor types 2N1771A, 2N1772A, 2N1774A, 2N1776A, and 2N1777A.
3
MIL-PRF-19500/168E
3.4 Interface requirements and physical dimensions. The interface requirements and physical dimensions for the purpose of
interchangeability shall be as specified on figure 1 herein
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-STD-750, MIL-PRF-19500, and herein. Where a choice of
lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.4.2 Construction. These devices shall be constructed in a manner and using materials which enable the devices to meet the
applicable requirements of MIL-PRF-19500 and this document.
3.5 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANTX level only). Screening shall be in accordance with MIL-PRF-19500 (Appendix E, table IV), and as specified
herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein
shall not be acceptable.
Screen (see table IV,
appendix E, of
MIL-PRF-19500)
Measurement
JANTX level
3a
7
Condition F, 10 cycles
Condition C or D for gross leaks
Not required
10
11
I
, I
V
, V
RRM DRM GT TM
12d
13
Condition A, T = +145 C minimum ;
°
C
V , V = rated (see 1.4.1).
RRM DRM
Subgroup 2 of table I herein,
= 100 percent of initial value or
I
D
RRM1
+1.0 mA(pk), whichever is greater.
= 100 percent of initial value or
I
D
DRM1
+1.0 mA(pk), whichever is greater.
4
MIL-PRF-19500/168E
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with appendix E, table V of MIL-PRF-19500 and
table I herein.
4.4.2 Group B inspection (JANTX and JANTXV) . Group B inspection shall be conducted in accordance with the conditions specified
for subgroup testing in appendix E, table VIb (JANTX and JANTXV) of MIL-PRF-19500, and as follows. Electrical measurements (end-
points) and delta requirements shall be in accordance with the applicable steps and footnotes of table II herein.
4.4.2.1 Group B inspection, appendix E, table VIb of MIL-PRF-19500.
Subgroup
B2
Method
1051
Condition
Test condition F, 15 cycles.
Condition C or D for gross leaks.
B2
1071
B2
4066
I = 60 A(pk) (0.5 sine wave); 10 surges 1 per minute; I = 4.7 A at rated
TSM O
V
RRM
; T = +65 C; f = 60 Hz; surge duration = 7 ms, minimum.
°
C
B3
B5
1026
T
= +118 C, 5 C, 50 min “on”, I = 1.25 A, T uncontrolled,
°
± °
C
O
C
10 minutes “off”.
Not applicable.
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
appendix E, table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) and delta requirements shall be in
accordance with the applicable steps and footnotes of table II herein.
4.4.3.1 Group C inspection, appendix E, table VII of MIL-PRF-19500
Subgroup
C2
Method
2036
Condition
Test condition A, weight 10 pounds, application time = 15 seconds.
Condition C or D for gross leaks.
C2
1071
C3
Not applicable.
C6
1026
T = +118 C, 5 C, 50 min “on”, I = 1.25 A, T uncontrolled, 10 minutes “off”.
° ± °
C O C
.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
5
MIL-PRF-19500/168E
TABLE I. Group A inspection.
Inspection 1/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
2071
Min
Max
Visual and mechanical
examination
Subgroup 2
Reverse blocking current
4211
4206
4221
AC method, bias condition D;
1
1
mA(pk)
mA(pk)
I
I
RRM1
f = 60 Hz; V
RRM
= rated (see 1.4.2)
Forward blocking current
AC method, bias condition D;
f = 60 Hz, V = rated (see 1.4.2)
DRM1
DRM
Gate trigger voltage
and current
2
V dc
V = V = 6 V dc; T = + 25 C
V
I
°
2
D
C
GT1
R = 20 maximum
W
GT1
e
15
mA dc
R = 50
L
W
W
W
2N1771A, 2N1772A,
2N1774A, 2N1776A,
2N1777A
R = 50
L
R = 50
L
Forward “on” voltage
4226
4201
1.85
25
V(pk)
I
= 14.8 A(pk) (pulse); pulse
V
TM
TM
width = 8.5 ms; maximum;
duty cycle = 2 percent maximum
Holding current
mA dc
I
H
Bias condition D; R = 50
W
2
V
AA
= 24 V dc maximum;
I
= 1 A dc; I = 100 mA dc;
F1
F2
trigger voltage source = 6 V dc;
trigger PW = 25 s (minimum);
m
Reverse gate current
4219
250
mA dc
V
G
= 10 V dc
I
G
Subgroup 3
High temperature operation:
T
= +145 C
°
C
Reverse blocking current
Forward blocking current
4211
4206
4221
AC method, bias condition D;
f = 60 Hz; V = rated (see 1.4.1).
2
2
2
2
I
I
RRM2
RRM
AC method, bias condition D;
f = 60 Hz; V = rated (see 1.4.1).
DRM2
DRM
Gate trigger voltage
and current
2
V dc
V = V = 6 V dc; T = + 125 C
V
°
2
D
C
GT2
R = 20 maximum,
W
e
15
mA dc
I
GT2
R = 140 , 650
W
W
L
See footnote at end of table.
6
MIL-PRF-19500/168E
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
Min
Max
Subgroup 3 - Continued
Low temperature operation:
T
= -65 C
°
C
Reverse blocking current
Forward blocking current
4211
4206
4221
AC method, bias condition D;
f = 60 Hz, V = rated (see 1.4.1)
1
1
mA(pk)
mA(pk)
I
I
RRM3
RRM
AC method, bias condition D;
f = 60 Hz; V = rated (see 1.4.1)
DRM3
DRM
Gate trigger voltage and
current
2
V dc
V = V = 6 V dc; R = 20
V
W
2
D
e
GT1
maximum
I
GT2
30
mA dc
2N1771A, 2N1772A
2N1774A, 2N1776A,
2N1777A
R = 140
L
W
W
W
R = 650
L
R = 650
L
Subgroups 4 and 5
Not applicable
Subgroup 6
Exponential rate of
voltage rise
4231
5
V/ s
m
Bias condition D; T = +150 C
repetition rate = 60 pps
°
d
v
/ d
t
C
test duration = 15 s; C = 10 F;
m
50
R
400
£ W
£
L
2N1771A
2N1772A
2N1774A
2N1776A
2N1777A
47
95
V dc
V dc
V dc
V dc
V dc
V
A
V
A
V
A
V
A
V
A
= 50 V dc
V
D
= 100 V dc
= 200 V dc
= 300 V dc
= 400 V dc
190
285
380
See footnote at end of table.
7
MIL-PRF-19500/168E
TABLE I. Group A inspection - Continued.
Inspection 1/
Subgroup 7
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
4224
Min
Max
Circuit commutated
turn-off time
T
t
= +145 C; I
= 5 A pk;
t
off
°
C
TM
= 100 s; d /d = 5 A/ s minimum;
m
m
on
i t
reverse voltage at t = 2 V minimum;
1
repetition rate = 1 Hz; d /d = 5 V/ s;
m
v
t
gate bias conditions: gate source
voltage = 0 V; gate source
resistance = 100
W
2N1771A
2N1772A
2N1774A
2N1776A
2N1777A
30
s
m
V
V
= V
= 50 V(pk);
= 50 V maximum
DM
DRM
RRM
V
V
= V
= 100 V(pk);
= 100 V maximum
DM
DRM
30
30
s
m
RRM
s
m
V
V
= V
= 200 V(pk);
= 200 V maximum
DM
DRM
RRM
30
30
s
m
V
V
= V
= 300 V(pk);
= 300 V maximum
DM
DRM
RRM
s
m
V
V
= V
= 400 V(pk);
= 400 V maximum
DM
DRM
RRM
Gate controlled
turn-on time
4223
5
s
m
I
= 5 A dc; V
= 10 V dc;
t
on
TM
GG
R = 50 ; t = 15 s;
5
± m
W
e
P1
2 A/ s d /d 200 A/ s.
m £
£
t
m
i
2N1771A
2N1772A
2N1774A
2N1776A
2N1777A
V
A
V
A
V
A
V
A
V
A
= V
= V
= V
= V
= V
= 50 V(pk)
= 100 V(pk)
= 200 V(pk)
= 300 V(pk)
= 400 V(pk)
DRM
DRM
DRM
DRM
DRM
1/ For sampling plan, see MIL-PRF-19500.
8
MIL-PRF-19500/168E
TABLE II. Groups A, B, and C electrical end-point inspection measurements. 1/ 2/
Step
Inspection
MIL-STD-750
Conditions
Symbol
Limits
Min Max
Unit
Method
4211
1.
2.
3.
Reverse blocking
cutoff current
AC method, bias condition D;
f = 60 Hz; V = rated (see 1.4.1).
1
1
2
mA(pk)
mA(pk)
mA(pk)
I
I
I
RRM1
DRM1
RRM2
RRM
Forward blocking
current
4206
4211
AC method, bias condition D;
f = 60 Hz; V = rated (see 1.4.1).
DRM
Reverse blocking
cutoff current
AC method, bias condition D;
T
= +125 C; f = 60 Hz;
°
C
V
RRM
= rated (see 1.4.1)
4.
Forward blocking
current
4206
AC method; bias condition D;
2
2
mA(pk)
I
DRM2
T
= +125 C; f = 60 Hz;
°
C
V
DRM
= rated (see 1.4.1)
5.
6.
Gate trigger voltage
and current
4221
4226
V dc
V
V = V = 6 V dc;
GT1
2
D
R = 50 ; R = 20 maximum
W
W
L
e
15
mA dc
V(pk)
I
GT1
Forward “on” voltage
transfer ratio
1.85
I
= 14.8 A(pk) (pulse);
V
TM
TM
pulse width = 8.5 ms maximum;
duty cycle = 2 percent maximum
1/ The electrical measurements for appendix E, table VIb (JAN and JANTX) of MIL-PRF-19500 are as follows:
Subgroups 2, 3, and 6, see table II herein, steps 1, 2, 3, 4, 5, and 6.
2/ The electrical measurements for appendix E, table VII of MIL-PRF-19500 are as follows:
Subgroups 2, 3, and 6, see table II herein, steps 1, 2, 3, 4, 5, and 6.
9
MIL-PRF-19500/168E
5. PACKAGING
5.1 Packaging. Packaging shall prevent mechanical damage of the devices during shipping and handling and shall not be detrimental
to the device. When actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible
packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points'
packaging activity within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging
data retrieval is available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or
by contacting the responsible packaging activity.
5.2 Marking. Unless otherwise specified (see 6.2), marking shall be in accordance with MIL-PRF-19500.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. See MIL- PRF-19500.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL No.19500 whether or not such products have actually been so
listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, ATTN: DSCC-VQE, 3990 East Broad Street, Columbus, OH 43216-5000.
6.4 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous
issue due to the extent of the changes.
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 17
(Project 5961- 1967)
Review activities:
Army - AV, MI
Air Force - 19, 85, 99
10
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/168E
2. DOCUMENT DATE (YYMMDD)
981017
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, THYRISTORS (CONTROLLED RECTIFIERS), SILICON, TYPES 2N1771A, 2N1772A, 2N1774A,
2N1776A, 2N1777A, JAN, AND JANTX
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
c. ADDRESS (Include Zip Code)
Commercial
DSN
7. DATE SUBMITTED
(YYMMDD)
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
a. Point of contact: Alan Barone
DSN
FAX
EMAIL
614-692-0510
850-0510
614-692-6939
alan_barone@dscc.dla.mil
c. Defense Supply Center Columbus, ATTN:
DSCC-VAT, 3990 East Broad Street,
Columbus, OH 43216-5000
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466
Telephone (703) 756-2340 DSN 289-2340
DD Form 1426, OCT 89
Previous editions are obsolete
198/290
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INFINEON
JANTX2N1806
Silicon Controlled Rectifier, 110A I(T)RMS, 70000mA I(T), 600V V(DRM), 720V V(RRM), 1 Element, TO-209AC, TO-94, 3 PIN
INFINEON
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