ND410820 [POWEREX]
Rectifier Diode, 1 Phase, 2 Element, 200A, 800V V(RRM), Silicon, POW-R-BLOK-3;
| 型号： | ND410820 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Rectifier Diode, 1 Phase, 2 Element, 200A, 800V V(RRM), Silicon, POW-R-BLOK-3 局域网 二极管 |
| 文件： | 总4页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ND41__32
POW-R-BLOKTM
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual Diode Isolated Module
Up to 320 Amperes & 2000 Volts
Description:
OUTLINE DRAWING
Powerex Dual Diode Modules are
designed for use in applications
requiring rectification and isolated
packaging. The modules are isolated
for easy mounting with other
components on a common heatsink.
POW-R-BLOKTM has been tested and
recognized by the Underwriters
Laboratories.
T - M8 THD. (3 TYP.)
U - DIA. (4 TYP.)
K
M
AK
A
G
J
N
K
C
B
S
A
W
Q
P
ND41__32
F
E
H
Features:
L
W
Dual Diode Isolated
TꢀElectrically Isolated Heatsinking
TꢀAluminum Nitride Isolator
T Compression Bonded Elements
T Metal Baseplate
POW-R-BLOKTM Module
200-320 Amperes / 600-2000 Volts
R
DIODE 1
T Low Thermal Impedance
for Improved Current Capability
T UL Recognized
K
AK
A
DIODE 2
CONNECTION DIAGRAM
Benefits:
TꢀNo Additional Insulation
Components Required
TꢀEasy Installation
TꢀNo Clamping Components
Required
Ordering Information
:
ND41 Outline Dimensions
Select the complete eight digit
module part number from the table
below.
Dimension
Inches
Millimeters
A
B
C
E
F
4.57
3.66
116
93
T Reduce Engineering Time
Example: ND412032 is a 2000Volt,
320 Ampere Dual Diode Isolated
POW-R-BLOKTM Module
3.15
80.0
52.3
52.0
50.0
48.3
38.1
35.0
34.3
28.5
18.0
14.5
15.9
10.00
8.9
2.06
2.05
Applications:
TꢀBridge Circuits
G
H
J
1.97
Current
Amperes
(x10)
Voltage
Volts
TꢀAC & DC Motor Drives
TꢀBattery Supplies
1.90
Type
ND41
1.50
(x100)
TꢀPower Supplies
K
L
1.38
TꢀLarge IGBT Circuit Front Ends
20
22
24
26
28
30
32
06
08
10
12
14
16
18
20
1.35
M
N
P
Q
R
S
T
1.122
.71
.57
.625
.394
.350
M8 Metric
.22 Dia.
.12
M8
U
W
5.6 Dia.
3.0
Note: Dimensions are for reference only.
Revision Date: 11/7/2001
ND41__32
POW-R-BLOKTM
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual Diode Isolated Module
Up to 320 Amperes & 2000 Volts
Absolute Maximum Ratings
Characteristics
Conditions
Symbol
VRRM
VRSM
Units
Repetitive Peak Reverse Blocking Voltage
Non-Repetitive Peak Reverse Blocking Voltage
(t < 5 msec)
up to 2000
VRRM + 200
V
V
RMS Forward Current
180° Conduction, TC=101°C
180° Conduction, TC=105°C
180° Conduction, TC=109°C
180° Conduction, TC=112°C
180° Conduction, TC=101°C
180° Conduction, TC=105°C
180° Conduction, TC=109°C
180° Conduction, TC=112°C
IF(RMS)
IF(RMS)
IF(RMS)
IF(RMS)
IF(AV)
502
470
440
408
320
300
280
260
A
A
A
A
A
A
A
A
Average Forward Current
IF(AV)
IF(AV)
IF(AV)
Peak One Cycle Surge Current, Non-Repetitive
60 Hz, 100% VRRM reapplied
60 Hz, No VRRM reapplied
IFSM
IFSM
8000
10,000
A
A
Initial T = T max
j
j
Peak Three Cycle Surge Current, Non-Repetitive
Peak Ten Cycle Surge Current, Non-Repetitive
I2t for Fusing for One Cycle, 8.3 milliseconds
Operating Temperature
60 Hz, 100% VRRM reapplied
60 Hz, 100% VRRM reapplied
IFSM
IFSM
I2t
TJ
Tstg
5750
4975
266,000
-40 to +150
-40 to +150
A
A
A2 sec
°C
Storage Temperature
°C
Max. Mounting Torque, M6 Mounting Screw
45
5
95
11
840
in.-Lb.
Nm
Max. Mounting Torque, M8 Terminal Screw
Module Weight, Typical
in.-Lb.
Nm
g
1.85
lb.
V Isolation @ 25C
Vrms
2500
V
Revision Date: 11/7/2001
ND41__32
POW-R-BLOKTM
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual Diode Isolated Module
Up to 320 Amperes & 2000 Volts
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Up to 2000V, TJ=150°C
IFM=1500A
Min.
Max.
50
1.35
Units
mA
V
Repetitive Peak Reverse Leakage Current
Peak On-State Voltage
IRRM
VFM
π
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
TJ = 150°C, I = 15%IF(AV) to IF(AV)
0.764
0.360
V
Ω
m
π
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
TJ = 150°C, I = IF(AV) to IFSM
0.710
0.420
V
Ω
m
VTM Coefficients, Full Range
TJ = 150°C, I = 15%IF(AV) to IFSM
A =
B =
C =
D =
0.7144
0.0232
4.72 E-4
-6.71 E-3
V
FM = A+ B Ln I +C I + D Sqrt I
Diode Reverse Recovery Time (Typical)
10
µs
t
I
= 1500A, T = 190 µs
rr
fm
p
di/dt = -25A/µs
Thermal Characteristics
Characteristics
Symbol
Max.
Units
Thermal Resistance, Junction to Case
Thermal Impedance Coefficients
Per Module, both conducting
Per Junction both conducting
0.07
0.14
°C/W
°C/W
R
Z
ΘJ-C
Z
= K (1-exp(-t/ ))
K = 5.27E-3
K = 1.17E-2
2
K = 5.26E-2
3
= 1.69E-4
= 2.07E-2
= 2.37E-1
τ
τ
τ
τ
ΘJ-C
ΘJ-C
1
1
1
1
2
3
+ K (1-exp(-t/ ))
τ
2
2
+ K (1-exp(-t/ ))
τ
3
3
+ K (1-exp(-t/ ))
K = 6.97E-2
4
= 2.46
τ
4
τ
4
4
Thermal Resistance, Case to Sink Lubricated
Per Module
0.03
°C/W
R
ΘC-S
Revision Date: 11/7/2001
ND41__32
POW-R-BLOKTM
Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 (724) 925-7272
Dual Diode Isolated Module
Up to 320 Amperes & 2000 Volts
Maximum On-State Forward Voltage Drop
( Tj = 150 °C )
Maximum Transient Thermal Impedance
(Junction to Case)
5
4
3
2
1
0
.16
.14
.12
.10
.08
.06
.04
.02
.00
10
100
1000
Ifm
10000
0.001
0.01
0.1
1
10
100
Instantaneous On-State Current
-
-
Amperes
Time - t - Seconds
Maximum Allowable Case Temperature
(Sinusoidal Waveform)
Maximum On-State Power Dissipation
(Sinusoidal Waveform)
150
350
300
250
200
150
100
50
120°
145
140
135
130
125
120
115
110
105
100
180°
90°
60°
180
360
0
30°
CONDUCTION ANGLE
15°
15°
30°
60°
180
360
0
CONDUCTION ANGLE
90°
120°
180°
0
0
50
100
150
200
250
300
350
0
50
100
150
200
250
300
350
Average On-State Current - If(av) - Amperes
Average On-State Current - If(av) - Amperes
Maximum On-State Power Dissipation
(Rectangular Waveform)
Maximum Allowable Case Temperature
(Rectangular Waveform)
150
140
130
120
110
100
90
500
450
400
350
300
250
200
150
100
50
270°
360°
180°
120°
90°
180
360
0
CONDUCTION ANGLE
15°
60°
30°
30°
15°
60°
90°
120°
180°
180
360
360°
0
CONDUCTION ANGLE
270°
80
0
0
100
200
300
400
500
0
100
200
300
400
500
Average On-State Current - If(av) - Amperes
Average On-State Current - If(av) - Amperes
Revision Date: 11/7/2001
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