QIR0620001 [POWEREX]

IGBT H-Series Chopper Module (200/300 Amperes/600 Volts); IGBT H系列斩波模块( 200/300安培/ 600伏特)
QIR0620001
型号: QIR0620001
厂家: POWEREX POWER SEMICONDUCTORS    POWEREX POWER SEMICONDUCTORS
描述:

IGBT H-Series Chopper Module (200/300 Amperes/600 Volts)
IGBT H系列斩波模块( 200/300安培/ 600伏特)

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总3页 (文件大小:60K)
中文:  中文翻译
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QIR0620001  
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272  
IGBT H-Series  
Chopper Module  
200/300 Amperes/600 Volts  
Description:  
Powerex IGBT modules are designed  
for use in switching applications. Each  
Module consists of one IGBT  
transistor and one super fast recovery  
diode in a chopper configuration. All  
components are encapsulated in a  
plastic package are electrically isolated  
from the heat sinking base plate,  
offering simplified system assembly and  
thermal management.  
Features:  
¨
¨
¨
Low Drive Power  
Low VCE(sat)  
Discrete Super-Fast Recovery  
(70ns) Diodes  
¨
¨
High Frequency Operation (20-  
25kHz)  
Isolated Base plate for Easy Heat  
sinking  
Schematic:  
D1  
D2  
Applications:  
¨
¨
AC Motor Control  
Motion/Servo Control  
Ordering Information:  
Contact Powerex Custom Modules  
Page 1  
PRELIMINARY  
06/07/97  
QIR0620001  
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272  
IGBT H-Series  
Chopper Module  
200/300 Amperes/600 Volts  
Maximum Ratings, Tj=25°C unless otherwise specified  
Ratings  
Symbol  
Units  
Collector Emitter Voltage  
Gate Emitter Voltage  
Collector Current  
Peak Collector Current  
Diode Forward Current (D1)  
Diode Forward Surge Current (D1)  
Power Dissipation  
VCES  
VGES  
IC  
ICM  
IFM  
IFM  
Pd  
VRMS  
600  
±20  
200  
400*  
300  
600*  
1100  
2500  
Volts  
Volts  
Amperes  
Amperes  
Amperes  
Amperes  
Watts  
V Isolation  
Volts  
Static Electrical Characteristics, Tj=25°C unless otherwise specified  
Characteristic  
Symbol  
Test  
Min  
Typ  
Max  
Units  
Conditions  
VCE=VCES  
VCE=0V  
IC=20mA,  
VCE=10V  
IC=200A,  
VGE=15V  
IC=200A,  
VGE=15V,  
Collector Cutoff Current  
Gate Leakage Current  
Gate-Emitter Threshold Voltage  
ICES  
IGES  
VGE(th)  
1.0  
0.5  
7.5  
mA  
mA  
Volts  
4.5  
6.0  
2.1  
Collector-Emitter Saturation Voltage  
VCE(sat)  
VCE(sat)  
2.8  
Volts  
Volts  
2.15  
Tj=150°C  
VCC=300V,  
IC=200A,  
VGS=15V  
IE=300A,  
VGS=0V  
Total Gate Charge  
QG  
600  
nC  
Diode Forward Voltage (D1)  
VFM  
2.8  
Volts  
Dynamic Electrical Characteristics, Tj=25°C unless otherwise specified  
Characteristic  
Symbol  
Test  
Conditions  
VGE=0V  
VCE=10V  
f=1MHz  
VCC=300V  
IC=200A  
VGE1=VGE2=15  
V
Min Typ  
Max  
Units  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn on Delay time  
Rise Time  
Cies  
Coes  
Cres  
td(on)  
tr  
20  
7
4
nF  
nF  
nF  
nS  
nS  
nS  
200  
550  
300  
Turn off delay time  
td(off)  
Fall Time  
Diode Reverse Recovery Time  
Diode reverse Recovery Charge  
tf  
trr  
Qrr  
300  
110  
nS  
nS  
mC  
RG=3.1W  
IE=200A  
diE/dt=-  
0.54  
400A/mS  
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified  
Characteristic  
Symbol  
Test  
Min  
Typ  
Max  
Units  
Conditions  
Thermal Resistance, Junction to  
Per IGBT  
0.16  
RqJC  
°C/W  
Page 2  
PRELIMINARY  
06/07/97  
QIR0620001  
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272  
IGBT H-Series  
Chopper Module  
200/300 Amperes/600 Volts  
Case  
Page 3  
PRELIMINARY  
06/07/97  

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