QRS4506001 [POWEREX]
Single Discrete Diode 60 Amperes /4500 Volts; 单分立二极管60安培/ 4500伏
| 型号： | QRS4506001 |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Single Discrete Diode 60 Amperes /4500 Volts |
| 文件： | 总2页 (文件大小：132K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QRS4506001
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Single Discrete Diode
60 Amperes /4500 Volts
Description:
Outline Drawing
Schematic
Powerex Single Non-Isolated
Discrete is designed specially for
customer high voltage
applications
Features:
Non-Isolated Package
Molybdenum Mounting Plate
Applications:
Snubber Circuits
Free Wheeling
Switching Power Supplies
Preliminary
Page 1
4/22/2004
QRS4506001
Powerex, Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272
Single Discrete Diode
60 Amperes /4500 Volts
Maximum Ratings, Tj=25°C unless otherwise specified
Ratings
Symbol
QRS4506001
Units
Peak Reverse Blocking Voltage
Average Current, TC = 100°C
Peak 3-Cycle Surge (Non-Repetitive) On-State Current (60 Hz)
I2t (for Fusing), 8.3 milliseconds
Operating Temperature
Storage Temperature
Mounting Torque, M5 Mounting Screws
Weight (Typical)
VRRM
IF(av)
IFSM
I2t
Tj
Tstg
4500
60
120
Volts
Amperes
Amperes
A2sec
°C
°C
In-lb
Grams
1900
-55 to 150
-55 to 125
30
-
21
Electrical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Reverse Leakage Current, Peak
Peak On-State Voltage
IRRM
VFM
Vrrm = 4500 V
IFM = 60A
-
-
-
1.0
6.2
mA
Volts
5.6
Reverse Recovery Time
trr
IFM=67A
di/dt = -800 A/µS
Vr = ½ VRM
-
230
-
nS
Reverse Recovery Charge
Qrr
IFM=67A
-
11
-
µC
di/dt = -800 A/µS
Vr = ½ VRM
*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Thermal and Mechanical Characteristics, Tj=25°C unless otherwise specified
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Thermal Resistance, Junction to Case
Diode
-
.08
.12
RθJC
°C/W
Preliminary
Page 2
4/22/2004
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