T820127504DH [POWEREX]
Silicon Controlled Rectifier, 1175A I(T)RMS, 750000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T82, 3 PIN;
| 型号： | T820127504DH |
| 厂家： | 
POWEREX POWER SEMICONDUCTORS |
| 描述： | Silicon Controlled Rectifier, 1175A I(T)RMS, 750000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, T82, 3 PIN 栅 栅极 |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
T820
750A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Phase Control SCR
750 Amperes Average
2400 Volts
www.pwrx.com
T820 750A Phase Control SCR
750 Amperes Average, 2400 Volts
Description:
Powerex Silicon Controlled
Rectifiers (SCR) are designed for
phase control applications. These
are all-diffused, Press-Pak,
hermetic Pow-R-Disc devices
employing the field proven
amplifying gate.
Features:
ꢀ Low On-State Voltage
ꢀ High di/dt Capability
ꢀ High dv/dt Capability
ꢀ Hermetic Packaging
ꢀ Excellent Surge and I2t Ratings
T820 750A (Outline Drawing)
Ordering Information:
Select the complete 12 digit module part number from the table below.
Example: T820167504DH is a 1600V 750A Phase Control SCR.
Applications:
ꢀ Power Supplies
ꢀ Motor Control
Voltage
VRRM
Current
IT(av)
Turn-off Time
Gate Current
Lead
Code
tq
IGT
(A)
(mA)
Type
T820
(Volts)
(µsec)
02
through
24
75
0
4
DH
12”
750A
200 µsec
(Typical)
150 mA
200V
through
2400V
Revision Date: 04/20/2009
T820
750A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Phase Control SCR
750 Amperes Average
2400 Volts
www.pwrx.com
Absolute Maximum Ratings
Characteristics
Symbol
Units
Volts
Non-Repetitive Transient Peak Reverse Blocking Voltage
RMS On-State Current, TC = 70°C
VRSM
IT(RMS)
IT(AV)
IT(RMS)
IT(AV)
ITSM
VRRM + 100V
1175
Amperes
Amperes
Amperes
Amperes
Amperes
Amperes
A/μsec
A/μsec
A2 sec
Watts
Watts
°C
Average Current 180° Sine Wave, TC = 70°C
RMS On-State Current, TC = 55°C
750
1500
Average Current 180° Sine Wave, TC = 55°C
Peak One Cycle Surge On-State Current (Non-Repetitive) 60 Hz
Peak One Cycle Surge On-State Current (Non-Repetitive) 50 Hz
Critical Rate-of-rise of On-State Current (Non-Repetitive)
Critical Rate-of-rise of On-State Current (Repetitive)
I2t (for Fusing) for One Cycle, 60 Hz
Peak Gate Power Dissipation
960
12,000
10,950
400
ITSM
di/dt
di/dt
I2t
150
600,000
16
PGM
PG(av)
TJ
Average Gate Power Dissipation
3
Operating Temperature
-40 to +125
-40 to +150
8
Storage Temperature
Tstg
°C
Approximate Weight
oz.
227
g
Mounting Force
3000 to 3500
1360 to 1590
lb.
kg.
Information presented is based upon manufacturers testing and projected capabilities.
This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability,
or future availability of this product.
Revision Date: 04/20/2009
T820
750A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Phase Control SCR
750 Amperes Average
2400 Volts
www.pwrx.com
Electrical Characteristics, TJ=25°C unless otherwise specified
Characteristics
Symbol
IRRM
Test Conditions
TJ=125°C, VR = VRRM
TJ=125°C, VD = VDRM
IFM=1500A peak,
Min.
Typ.
Max.
60
Units
mA
mA
V
Repetitive Peak Reverse Leakage Current
Repetitive Peak Forward Leakage Current
Peak On-State Voltage
IDRM
60
VTM
1.65
Duty Cycle < 0.1 %
Threshold Voltage, Low-level
Slope Resistance, Low-level
V(TO)1
rT1
0.97268
0.4950
V
mΩ
TJ = 125°C, I = 15%IT(AV) to πIT(AV)
TJ = 125°C, I = πIT(AV) to ITSM
Threshold Voltage, High-level
Slope Resistance, High-level
V(TO)2
rT2
1.2785
0.3365
V
mΩ
VTM Coefficients, Low-level
VTM Coefficients, High-level
A =
B =
C =
D =
A =
B =
C =
D =
5
0.50605
0.073285
2.864 E-04
0.007176
-10.717
2.2006
7.43 E-04
-0.12418
TJ = 125°C, I = 15%IT(AV) to πIT(AV)
VTM = A+ B Ln(I) +C(I) + D Sqrt(I)
TJ = 125°C, I = πIT(AV) to ITSM
VTM = A+ B Ln(I) +C(I) + D Sqrt(I)
IT = 1000A, VD = 600 V
Typical Turn-On Time
Typical Turn-Off Time
ton
µs
µs
200
t
Tj = 125°C, I = 250A,
q
T
diR/dt = 50A/µs Reapplied
dv/dt = 20 V/µs Linear to 80% VDRM
Minimum Critical dv/dt – Exponential to VDRM
dv/dt
TJ = 125°C
300
V/µs
mA
V
Gate Trigger Current
IGT
TJ = 25°C, VD = 12 V
TJ = 25°C, VD = 12 V
TJ = 125°C, VD = VDRM
150
3.0
0.15
4
Gate Trigger Voltage
VGT
Non-Triggering Gate Voltage
Peak Forward Gate Current
Peak Reverse Gate Voltage
VGDM
IGTM
VGRM
V
A
5
V
Thermal Characteristics
Maximum Thermal Resistance, Double Sided Cooling
Max.
Units
Junction-to-Case
Case-to-Sink
0.037
0.020
°C/W
°C/W
R
Θ(J-C)
R
Θ(C-S)
Revision Date: 04/20/2009
T820
750A
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
Phase Control SCR
750 Amperes Average
2400 Volts
www.pwrx.com
Maximum On-State Forward Voltage Drop
Maximum Transient Thermal Impedance
(Junction to Case)
( Tj = 125 °C )
0.04
5
4
3
2
1
0
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
10
100
1000
10000
100000
0.0001
0.001
0.01
0.1
1
10
Instantaneous On-State Current - Itm - Amperes
Time - t - Seconds
Maximum Allowable Case Temperature
(SinusoidalWaveform)
Maximum On-State Power Dissipation
(SinusoidalWaveform)
1600
1400
1200
1000
800
600
400
200
0
130
180°
120
110
100
90
120°
90°
60°
15°
30°
60°
30°
15°
80
90°
70
120°
180°
60
50
0
100
200
300
400
500
600
700
800
0
100
200
300
400
500
600
700
800
900
Average On-State Current- It(av) - Amperes
Average On-State Current- It(av) - Amperes
Maximum On-State Power Dissipation
(RectangularWaveform)
Maximum Allowable Case Temperature
(RectangularWaveform)
2000
1800
1600
1400
1200
1000
800
130
360°
270°
120
110
100
90
180°
120°
90°
60°
30°
80
15°
70
600
30°
15°
60°
90°
600
120°
60
400
180°
270°
360°C
50
200
0
40
0
200
400
600
800
1000
1200
1400
0
200
400
800
1000
1200
1400
Average On-State Current- It(av) - Amperes
Average On-State Current- It(av) - Amperes
Revision Date: 04/20/2009
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