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元器件品牌
CM200DY-24NF
[POWEREX]
Trench Gate Design Dual IGBTMODâ¢; 沟槽栅设计的双IGBTMODâ ?? ¢
元器件型号：
CM200DY-24NF
生产厂家：
POWEREX POWER SEMICONDUCTORS
描述和应用：
Trench Gate Design Dual IGBTMODâ¢
沟槽栅设计的双IGBTMODâ ?? ¢
双极性晶体管 栅
PDF文件：
总4页 (文件大小：171K)
下载文档：
下载PDF数据表文档文件
型号参数：CM200DY-24NF参数
查看货源
CM200DY-24NF_09
IGBT MODULES HIGH POWER SWITCHING USE
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156
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14
MITSUBISHI
CM200DY-28H
HIGH POWER SWITCHING USE INSULATED TYPE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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66
MITSUBISHI
CM200DY-28H
Dual IGBTMOD 200 Amperes/1400 Volts
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: Undefined variable $rtag in
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156
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57
POWEREX
CM200DY-34A
HIGH POWER SWITCHING US
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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49
MITSUBISHI
CM200DY-34A
IGBT MODULES HIGH POWER SWITCHING USE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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25
MITSUBISHI
CM200DY-34A
Dual IGBTMOD A-Series Module 200 Amperes/1700 Volts
Warning
: Undefined variable $rtag in
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156
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12
POWEREX
CM200DY-34A_09
IGBT MODULES HIGH POWER SWITCHING USE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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20
MITSUBISHI
CM200DY-34A_11
HIGH POWER SWITCHING USE INSULATED TYPE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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12
MITSUBISHI
CM200E3U-12H
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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10
MITSUBISHI
CM200E3U-12H
Chopper IGBTMOD 200 Amperes/600 Volts
Warning
: Undefined variable $rtag in
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156
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36
POWEREX
CM200E3U-12H
HIGH POWER SWITCHING USE INSULATED TYPE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
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56
MITSUBISHI
CM200E3U-12H_09
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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14
MITSUBISHI
CM200E3U-24F
HIGH POWER SWITCHING USE
Warning
: Undefined variable $rtag in
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156
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21
MITSUBISHI
CM200E3Y12E
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 600V V(BR)CES | 200A I(C)
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38
ETC
CM200E3Y-12E
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel
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0
MITSUBISHI
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