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元器件品牌
CM200TU-12F
[POWEREX]
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts; 沟槽栅设计六IGBTMOD⑩ 200安培/ 600伏
元器件型号：
CM200TU-12F
生产厂家：
POWEREX POWER SEMICONDUCTORS
描述和应用：
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/600 Volts
沟槽栅设计六IGBTMOD⑩ 200安培/ 600伏
晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件：
总4页 (文件大小：130K)
下载文档：
下载PDF数据表文档文件
型号参数：CM200TU-12F参数
查看货源
CM200TU-12F_09
IGBT MODULES HIGH POWER SWITCHING USE
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MITSUBISHI
CM200TU-12H
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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12
MITSUBISHI
CM200TU-12H
HIGH POWER SWITCHING USE INSULATED TYPE
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38
MITSUBISHI
CM200TU-12H
Six IGBTMOD 200 Amperes/600 Volts
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36
POWEREX
CM200TU-12H_09
IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
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15
MITSUBISHI
CM200TU-5F
HIGH POWER SWITCHING USE
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23
MITSUBISHI
CM200TU-5F
Trench Gate Design Six IGBTMOD⑩ 200 Amperes/250 Volts
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28
POWEREX
CM200YE4-12F
Insulated Gate Bipolar Transistor, 200A I(C), 600V V(BR)CES, N-Channel, MODULE-12
Warning
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5
POWEREX
CM201
Plastic Moulded Watch Crystals
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156
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83
AEL
CM2010
VGA Port Protection with Integrated Sync Buffers
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156
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195
CALMIRCO
CM2010-02MR
VGA Port Protection with Integrated Sync Buffers
Warning
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156
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32
CALMIRCO
CM2010-02MS
VGA Port Protection with Integrated Sync Buffers
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25
CALMIRCO
CM20101GQ
General Purpose Inductor, 100uH, 1 Element, Amorphous Magnetic-Core
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156
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0
CHEMI-CON
CM20101GQD
General Purpose Inductor, 100uH, 1 Element, Amorphous Magnetic-Core
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0
CHEMI-CON
CM20101GQD
General Purpose Inductor, 100uH, 1 Element, Amorphous Magnetic-Core
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0
CHEMI-CON
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