PSB82 [POWERSEM]
Single Phase Rectifier Bridges; 单相整流桥![PSB82](http://pdffile.icpdf.com/pdf1/p00145/img/icpdf/PSB82_803613_icpdf.jpg)
型号: | PSB82 |
厂家: | ![]() |
描述: | Single Phase Rectifier Bridges |
文件: | 总2页 (文件大小:168K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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Single Phase
PSB 82
IdAVM
VRRM
= 72A
Rectifier Bridges
= 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800
800
PSB 82/08
PSB 82/12
PSB 82/14
PSB 82/16
PSB 82/18
~
~
1200
1400
1600
1800
1200
1400
1600
1800
Features
Symbol Test Conditions
Maximum Ratings
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
TC = 100°C, module
72
750
820
A
A
A
IdAVM
IFSM
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
670
740
2800
2800
2250
2250
A
A
A2 s
A2 s
∫ i2 dt
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
TVJ
TVJM
Tstg
VISOL
Advantages
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
5
5
160
V ∼
V ∼
Nm
Nm
g
• Easy to mount with two screws
• Space and weight savings
Mounting torque
Terminal connection torque
typ.
(M5)
(M5)
Md
• Improved temperature and power
cycling capability
Weight
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol Test Conditions
Characteristic Value
VR = VRRM
VR = VRRM
TVJ = 25°C
0.3
5
mA
mA
≤
≤
IR
TVJ = TVJM
IF = 150 A
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
TVJ = 25°C
1.6
0.8
5
1.1
0.28
V
V
mΩ
K/W
K/W
≤
VF
VTO
rT
RthJC
per diode; DC current
per module
1.52
0.38
K/W
K/W
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
dS
dA
a
m/s2
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSB 82
4
I
10
F(OV)
FSM
200
[A]
------
I
2
I
(A)
As
FSM
TVJ=45°C
750
TVJ=150°C
670
1.6
1.4
1.2
1
150
TVJ=45°C
3
TVJ=150°C
10
100
0 V
RRM
0.8
0.6
50
IF
0
1/2 V
1 V
RRM
Tvj = 150°C
RRM
Tvj = 25°C
2
10
0.4
10
1
2
4
6
10
0
1
2
3
1
0.5
1.5
2
t [ms]
10 t[ms] 10
10
VF [V]
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
95
200
TC
[W]
PSB 82
80
100
0.350.22 = RTHCA [K/W]
DC
175
150
125
100
[A]
0.47
sin.180°
105
rec.120°
110
rec.60°
rec.30°
60
40
20
115
0.73
120
125
1.23
75
130
135
DC
50
sin.180°
rec.120°
rec.60°
rec.30°
2.72
140
I
dAV
25
145
0
PVTOT
0
°C
50
100
150
200
150
T (°C)
C
0
50
100
150
10
IFAVM
30
50
70
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature
at case temperature
2
K/W
Z
Z
thJK
thJC
1.5
1
0.5
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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