PSD125 [POWERSEM]
Three Phase Rectifier Bridges; 三相整流桥
| 型号： | PSD125 |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Three Phase Rectifier Bridges |
| 文件： | 总2页 (文件大小：172K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Three Phase
PSD125
IdAVM
VRRM
= 166 A
Rectifier Bridges
= 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800
800
PSD 125/08
PSD 125/12
PSD 125/14
PSD 125/16
PSD 125/18
~
1200
1400
1600
1800
1200
1400
1600
1800
~
~
Features
Symbol Test Conditions
Maximum Ratings
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
TC = 85°C, module
TVJ = 45°C
166
1800
1950
A
A
A
IdAVM
IFSM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
VR = 0
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1600
1800
16200
16000
12800
13600
A
A
A2 s
A2 s
∫ i2 dt
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
A2 s
-40 ... + 150
150
-40 ... + 150
°C
°C
°C
TVJ
TVJM
Tstg
VISOL
Advantages
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
5
5
240
V ∼
V ∼
Nm
Nm
g
• Easy to mount with two screws
• Space and weight savings
Mounting torque
Terminal connection torque
typ.
(M5)
(M5)
Md
• Improved temperature and power
cycling capability
Weight
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol Test Conditions
Characteristic Value
VR = VRRM
VR = VRRM
TVJ = 25°C
0.3
8.0
mA
mA
≤
≤
IR
TVJ = TVJM
IF = 150 A
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
TVJ = 25°C
1.3
0.8
3
0.83
0.138
V
V
mΩ
K/W
K/W
≤
VF
VTO
rT
RthJC
per diode; DC current
per module
1.13
0.188
K/W
K/W
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
14
14
50
mm
mm
dS
dA
a
m/s2
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSD 125
5
I
10
F(OV)
------
I
200
A
FSM
I
(A)
2
FSM
As
TVJ=45°C
TVJ=150°C
1600
1.6
1.4
1.2
1
1800
160
T=150°C
TVJ=45°C
120
80
4
10
TVJ=150°C
0 V
RRM
0.8
0.6
1/2 V
1 V
RRM
40
RRM
T=25°C
3
I
F
10
0.4
10
1
2
4
6
10
0
0
1
2
3
t [ms]
10 t[ms] 10
10
1
1.5
V
V
F
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
65
600
TC
70
[W]
PSD 125
200
75
80
0.070.03 = RTHCA [K/W]
0.11
DC
[A]
500
400
300
sin.180°
85
rec.120°
90
rec.60°
rec.30°
150
100
50
95
0.2
100
105
110
115
120
125
130
135
140
145
0.36
0.86
200
DC
sin.180°
rec.120°
rec.60°
rec.30°
100
I
dAV
0
PVTOT
0
°C
50
100
150
200
150
T
(°C)
C
0
50
100
150
25
IFAVM
75
125
175
[A]
Tamb
[K]
Fig. 4 Power dissipation versus direct output current and ambient Fig.5 Maximum forward current
temperature at case temperature
K/W
Z
Z
thJK
thJC
1.2
1
0.8
0.6
0.4
0.2
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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