PSD192 [POWERSEM]
Three Phase Rectifier Bridges; 三相整流桥
| 型号： | PSD192 |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Three Phase Rectifier Bridges |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Three Phase
PSD192
IdAV
= 248 A
Rectifier Bridges
VRRM
= 800-1800 V
Preliminary Data Sheet
VRSM
V
VRRM
V
Type
800
800
PSD 192/08
PSD 192/12
PSD 192/14
PSD 192/16
PSD 192/18
~
~
~
1200
1400
1600
1800
1200
1400
1600
1800
Features
Symbol Test Conditions
Maximum Ratings
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 148688
TC = 90°C, module
TVJ = 45°C
248
2800
3300
A
A
A
IdAV
IFSM
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
VR = 0
TVJ = TVJM
VR = 0
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
2500
2750
39200
45000
31200
31200
A
A
A2 s
A2 s
∫ i2 dt
Applications
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
A2 s
-40 ... + 150
150
-40 ... + 125
°C
°C
°C
TVJ
TVJM
Tstg
VISOL
Advantages
50/60 HZ, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
5
5
270
V ∼
V ∼
Nm
Nm
g
• Easy to mount with two screws
• Space and weight savings
Mounting torque
Terminal connection torque
typ.
(M6)
(M6)
Md
• Improved temperature and power
cycling capability
Weight
Package, style and outline
Dimensions in mm (1mm = 0.0394“)
Symbol Test Conditions
Characteristic Value
VR = VRRM
VR = VRRM
TVJ = 25°C
0.3
5
mA
mA
≤
≤
IR
TVJ = TVJM
IF = 300 A
For power-loss calculations only
TVJ = TVJM
per diode; DC current
per module
per diode; DC current
per module
Creeping distance on surface
TVJ = 25°C
1.43
0.8
2.2
0.45
0.075
0.6
0.1
10
V
V
mΩ
K/W
K/W
K/W
K/W
mm
≤
VF
VTO
rT
RthJC
RthJK
dS
Creeping distance in air
Max. allowable acceleration
9.4
50
mm
dA
a
m/s2
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSD 192
5
I
10
F(OV)
200
[A]
------
I
FSM
2
I
(A)
FSM
As
TVJ=45°C
2800
TVJ=150°C
2500
1.6
1.4
1.2
1
TVJ=45°C
150
TVJ=150°C
4
10
10
100
0
V
RRM
0.8
0.6
50
IF
0
1/2
1
V
RRM
Tvj = 150°C
V
RRM
Tvj = 25°C
3
1
2
4
6
10
0.4
10
1
0.5
1.5
2
t [ms]
0
1
2
3
10 t[ms] 10
10
VF [V]
Fig. 3 ∫i2dt versus time
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode IFSM: Crest value.
t: duration
(1-10ms) per diode (or thyristor)
700
75
250
TC
[W]
DC
PSD 192
80
0.070.03 = RTHCA [K/W]
[A]
sin.180°
85
600
500
400
300
0.11
rec.120°
200
90
95
rec.60°
rec.30°
100
0.18
150
100
50
105
110
115
0.32
120
125
130
DC
sin.180°
rec.120°
rec.60°
rec.30°
200
0.75
135
140
145
100
I
dAV
PVTOT
°C
0
150
0
50
100
150
200
0
50
100
150
25
75 125 175 225
IFAVM
[A]
Tamb
[K]
T
(°C)
C
Fig. 4 Power dissipation versus direct output current and ambient
temperature
Fig.5 Maximum forward current
at case temperature
1
K/W
Z
thJK
0.5
Z
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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