PSDT175 [POWERSEM]
Three Phase Full Controlled Bridges; 三相全控桥
| 型号： | PSDT175 |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Three Phase Full Controlled Bridges |
| 文件： | 总3页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Three Phase
PSDT 175
IdAV
= 167 A
Full Controlled Bridges
VRRM
= 600-1600 V
Preliminary Data Sheet
VRSM
VDSM
VRRM
VDRM
Type
700
600
PSDT 175/06
PSDT 175/08
PSDT 175/12
PSDT 175/14
PSDT 175/16
~
~
~
900
1300
1500
*1700
800
1200
1400
*1600
* Delivery on request
Features
Symbol
IdAV
Test Conditions
Maximum Ratings
• Package with screw terminals
• Isolation voltage 3000 V∼
• Planar glasspassivated chips
• Low forward voltage drop
• UL registered, E 148688
TC = 85 °C, module
167
1500
1600
A
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
ITSM
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
1350
1450
11 200
10 750
9100
8830
A
A
TVJ = 45°C
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
A2 s
∫ i2 dt
Applications
• Heat and temperature control for
industrial furnaces and chemical
processes
TVJ = TVJM
VR = 0
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
A2 s
A2 s
• Lighting control
• Motor control
• Power converter
TVJ = TJVM
repetitive, IT = 50 A
150
A/µs
(di/dt)cr
f = 400Hz, tP = 200µs
VD = 2/3 VDRM
IG = 0.3 A
non repetitive, IT = 1/3 . IdAV
500
Advantages
A/µs
V/µs
• Easy to mount with two screws
• Space and weight savings
diG/dt = 0.3 A/µs
TVJ = TVJM
VDR = 2/3 VDRM
1000
(dv/dt)cr
PGM
• Improved temperature and power
RGK = ∞, method 1 (linear voltage rise)
cycling capability
TVJ = TVJM
IT = ITAVM
W
W
W
V
°C
°C
°C
tP = 30µs
tP = 500µs
≤
≤
≤
10
5
0.5
10
• High power density
Package, style and outline
PGAVM
Dimensions in mm (1mm = 0.0394“)
VRGM
TVJ
-40 ... + 125
125
TVJM
Tstg
-40 ... + 125
50/60 HZ, RMS t = 1 min
2500
3000
5
5
270
V ∼
V ∼
Nm
Nm
g
VISOL
t = 1 s
IISOL ≤ 1 mA
Mounting torque
Terminal connection torque
typ.
(M6)
(M6)
Md
Weight
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 175
Symbol Test Conditions
Characteristic Value
TVJ = TVJM, VR = VRRM, VD = VDRM
5
1.57
0.85
3.5
mA
V
≤
≤
ID, IR
VT
IT = 200A, TVJ = 25°C
For power-loss calculations only (TVJ = TVJM
)
V
VTO
mΩ
rT
VD = 6V
VD = 6V
TVJ = 25°C
TVJ = -40°C
TVJ = 25°C
TVJ = -40°C
1.5
1.6
V
V
≤
≤
VGT
IGT
100
200
mA
mA
≤
≤
TVJ = TVJM
TVJ = TVJM
TVJ = 25°C, tP = 30µs
VD = 2/3 VDRM
VD = 2/3 VDRM
0.2
5
450
V
mA
mA
≤
≤
VGD
IGD
IL
≤
IG = 0.3A, diG/dt = 0.3A/µs
200
2
mA
µs
TVJ = 25°C, VD = 6V, RGK = ∞
TVJ = 25°C, VD = ½ VDRM
IG = 0.3A, diG/dt = 0.3A/µs
≤
≤
IH
tgd
150
TVJ = TVJM, IT = 20A, tP = 200µs, VR = 100V
-di/dt = 10A/µs, dv/dt = 15V/µs, VD = 2/3 VDRM
per thyristor; sine 180°el
per module
per thyristor; sine 180° el
per module
µs
tq
0.46
0.077
0.55
0.092
K/W
K/W
K/W
K/W
RthJC
RthJK
Creeping distance on surface
Creeping distance in air
Max. allowable acceleration
10
9.4
50
mm
mm
dS
dA
a
m/s2
I
T(OV)
------
I
300
TSM
T
=25°C
I
TVJ=45°C
1500
(A)
VJ
1:T = 125°C
TSM
VJ
us
[A]
250
TVJ=150°C
1350
2:T = 25°C
VJ
1.6
1.4
1.2
1
100
200
150
100
50
t
gd
10
0 V
RRM
0.8
0.6
1/2 V
1 V
RRM
RRM
I
F
1
2
1
0
0.4
10
100
[mA]
0.5
1
1.5
2
10
1000
0
1
2
3
10 t[ms] 10
10
I
G
V [V]
F
Fig. 1 Forward current vs.
voltage drop per diode or
thyristor
Fig. 2 Gate trigger delay time
Fig. 3 Surge overload current
per diode (or thyristor) IFSM
TSM: Crest value t: duration
,
I
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
PSDT 175
10
V
200
[A]
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
4: PGAV = 0.5 W
5: PGM = 5 W
DC
sin.180°
rec.120°
rec.60°
rec.30°
150
125
100
75
6: PGM = 10W
6
1
5
4
50
V
G
3
25
TAV
I
2
0
1
50
100
150
200
T (°C)
C
0.1
0
1
2
3
4
10
10
I
10
10
mA
10
G
Fig.4 Gate trigger characteristic
Fig.5 Maximum forward current
at case temperature
0.8
K/W
Z
0.6
0.4
0.2
thJK
Z
thJC
Z
th
0.01
0.1
1
10
t[s]
Fig.6 Transient thermal impedance per thyristor or diode
(calculated)
600
80
[W]
PSDT175
TC
85
0.090.05 = RTHCA [K/W]
0.13
500
90
95
400
300
200
100
0.2
100
105
110
115
120
0.34
0.76
DC
sin.180°
rec.120°
rec.60°
rec.30°
°C
PVTOT
0
125
0
50
100
150
50
100
150
[A]
ITAVM
Tamb
[K]
Fig. 7 Power dissipation vs. direct output current and ambient
temperature
POWERSEM GmbH, Walpersdorfer Str. 53
91126 D- Schwabach
2003 POWERSEM reserves the right to change limits, test conditions and dimensions
Phone: 09122 - 9764-0 Fax.: 09122 - 9764-20
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