PSM200K [POWERSEM]
Silicon Power Diode; 硅功率二极管
| 型号： | PSM200K |
| 厂家： | 
POWERSEM GMBH |
| 描述： | Silicon Power Diode |
| 文件： | 总1页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DO - 8
200 A
PSM/PSMR 200K
Silicon Power Diode
IF(AV) =
PSMF/PSMFR 200K
VRRM = 100 - 1000 V
Preliminary Data Sheet
VRRM
V
V
recommended
max.repetitive
maRx(.RRMMS)S
max.RDC
RMS working
Type
peak voltage reverse voltage blocking voltage
voltage
(V)
(V)
100
200
400
600
800
1000
(V)
(V)
100
200
400
600
800
1000
with terminal lead
70
40
PSM/PSMR 200/01K PSMF/PSMFR 200/01K
PSM/PSMR 200/02K PSMF/PSMFR 200/02K
PSM/PSMR 200/04K PSMF/PSMFR 200/04K
PSM/PSMR 200/06K PSMF/PSMFR 200/06K
PSM/PSMR 200/08K PSMF/PSMFR 200/08K
PSM/PSMR 200/10K PSMF/PSMFR 200/10K
140
280
420
560
700
80
160
240
320
400
Symbol Conditions
Maximum Ratings
DO - 8
IF(AV)
TC = 130°C
TVJ = 45°C
200
A
PSM/PSMR 200 PSMF/PSMFR 200
IFSM
IFRM
I2t
t = 10 ms
4300
A
max. peak cycle repetitive surge current
1100
A
max. I2t rating (non-rep.) for 5 to 10 ms
92500
A2s
IR(AV)
max. average reverse leakage current
at VRRM; TC = 25°C
min.
max.
30
50
µA
µA
VFM
RthJC
TVJ
max. peak forward voltage drop @ rated 1F(AV)
max. thermal resistance junction to case
operating junction temperature
1.35
V
0.2
K/W
°C
°C
°C
mkg
mkg
g
-65... + 150
150
-65... + 200
2.0
TVJM
Tstg
Md
max. virtual junction temperature
storage temperature
mounting torque
(non-lubricated threads)
min.
max.
3.0
150
Weight typ.
Features
•
•
•
•
Diffused Series
Available in Normal & Reverse Polarity
Industrial Grade
Available in Avalanche Characteristic
2005 POWERSEM reserves the right to change limits, test conditions and dimensions
POWERSEM GmbH, Walpersdorfer Str. 53
D - 91126 Schwabach
Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20
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