PE4231 [PSEMI]

SPDT High Power UltraCMOS - DC 1.3 GHz RF Switch; SPDT大功率的UltraCMOS - DC 1.3 GHz的RF开关
PE4231
型号: PE4231
厂家: Peregrine Semiconductor    Peregrine Semiconductor
描述:

SPDT High Power UltraCMOS - DC 1.3 GHz RF Switch
SPDT大功率的UltraCMOS - DC 1.3 GHz的RF开关

开关 光电二极管
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中文:  中文翻译
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Product Specification  
PE4231  
SPDT High Power UltraCMOS™  
Product Description  
DC – 1.3 GHz RF Switch  
The PE4231 SPDT High Power UltraCMOS™ RF Switch is  
designed to cover a broad range of applications from DC to 1.3  
GHz. This single-supply reflective switch integrates on-board  
CMOS control logic driven by a simple, single-pin CMOS or  
TTL compatible control input. Using a nominal +3-volt power  
supply, a typical input 1 dB compression point of +32 dBm can  
be achieved. The PE4231 also exhibits input-output isolation of  
better than 42 dB at 1.0 GHz and is offered in a small 8-lead  
MSOP package.  
Features  
Optimized for 75 systems  
Single +3-volt power supply  
Low insertion loss: 0.80 dB at 1.0 GHz  
High isolation: 42 dB at 1.0 GHz  
Typical input 1 dB compression point of  
+32 dBm  
Single-pin CMOS or TTL logic control  
Low cost  
The PE4231 SPDT High Power UltraCMOS™ RF Switch is  
manufactured in Peregrine’s patented Ultra Thin Silicon  
(UTSi®) CMOS process, offering the performance of GaAs with  
the economy and integration of conventional CMOS.  
Figure 2. Package Type  
Figure 1. Functional Diagram  
8-lead MSOP  
RFCommon  
RF1  
RF2  
CMOS  
Control  
Driver  
CTRL  
Table 1. Electrical Specifications @ +25 °C, VDD = 3 V (ZS = ZL = 75 )  
Parameter  
Conditions  
Minimum  
Typical  
Maximum  
Units  
Operation Frequency1  
DC  
1300  
0.60  
0.90  
MHz  
50 MHz  
0.50  
Insertion Loss  
dB  
dB  
dB  
1000 MHz  
50 MHz  
0.80  
75  
73  
Isolation – RFCommon to  
RF1/RF2  
1000 MHz  
50 MHz  
40  
58  
42  
60  
Isolation – RF1 to RF2  
1000 MHz  
1000 MHz  
33  
16  
35  
17  
Return Loss  
dB  
ns  
‘ON’ Switching Time  
‘OFF’ Switching Time  
Video Feedthrough2  
Input 1 dB Compression3  
Input IP33  
CTRL to 0.1 dB final value, 2 GHz  
CTRL to 25 dB isolation, 2 GHz  
2000  
900  
15  
ns  
mVpp  
dBm  
dBm  
1000 MHz  
30  
50  
32  
1000 MHz, 17 dBm  
Notes:  
1. Device linearity will begin to degrade below 1 MHz.  
2. Measured with a 1 ns risetime, 0/3 V pulse and 500 MHz bandwidth.  
3. Measured in a 50 system.  
Document No. 70-0097-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 1 of 7  
PE4231  
Product Specification  
Figure 3. Pin Configuration (Top View)  
Table 4. DC Electrical Specifications  
Parameter  
Min  
Typ  
Max  
Units  
VDD Power Supply  
Voltage  
2.7  
3.0  
3.3  
V
1
2
3
4
8
7
6
5
VDD  
CTRL  
RF1  
GND  
GND  
RF2  
IDD Power Supply Current  
(VDD = 3V, VCNTL = 3V)  
29  
35  
µA  
4231  
Control Voltage High  
Control Voltage Low  
0.7xVDD  
V
V
GND  
0.3xVDD  
RFCommon  
Table 5. Truth Table  
Table 2. Pin Descriptions  
Control Voltage  
Signal Path  
Pin  
Pin Name  
No.  
Description  
CTRL = CMOS or TTL High  
CTRL = CMOS or TTL Low  
RFCommon to RF1  
RFCommon to RF2  
1
VDD  
Nominal +3 V supply connection.  
2
CTRL  
CMOS or TTL logic level:  
The control logic input pin (CTRL) is typically  
driven by a 3-volt CMOS logic level signal, and  
has a threshold of 50% of VDD. For flexibility to  
support systems that have 5-volt control logic  
drivers, the control logic input has been designed  
to handle a 5-volt logic HIGH signal. (A minimal  
current will be sourced out of the VDD pin when the  
control logic input voltage level exceeds VDD.)  
High = RFCommon to RF1 signal path  
Low = RFCommon to RF2 signal path  
3
GND  
Ground connection. Traces should be  
physically short and connected to ground  
4
5
6
RF Common Common RF port for switch.1  
RF2  
RF2 port.1  
GND  
Ground Connection. Traces should be  
physically short and connected to ground  
Latch-Up Avoidance  
7
8
GND  
RF1  
Ground Connection. Traces should be  
physically short and connected to ground  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
RF1 port.1  
Electrostatic Discharge (ESD) Precautions  
Note 1: All RF pins must be DC blocked with an external  
series capacitor or held at 0 VDC  
.
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with  
other ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the rating specified in Table 3.  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/  
Conditions  
Min  
Max  
Units  
VDD  
VI  
Power supply voltage  
-0.3  
-0.3  
4.0  
V
V
Voltage on any input ex-  
cept for the CTRL input  
VDD+  
0.3  
VCTRL  
TST  
Voltage on CTRL input  
5.0  
V
Storage temperature  
range  
-65  
-40  
150  
°C  
Operating temperature  
range  
TOP  
PIN  
85  
33  
°C  
dBm  
V
Input power (50)  
ESD voltage (Human  
Body Model)  
VESD  
200  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0097-01 UltraCMOS™ RFIC Solutions  
Page 2 of 7  
PE4231  
Product Specification  
Typical Performance Data @ -40 °C to 85 °C (Unless Otherwise Noted)  
Figure 4. Insertion Loss – RFC to RF1  
Figure 5. Input 1dB Compression Point  
40  
30  
20  
10  
0
0
-40 8C  
85 8C  
-0.25  
-40 8C  
25 8C  
-0.5  
-0.75  
85 8C  
25 8C  
-1  
-1.25  
-1.5  
0
200  
400  
600  
800  
1000  
1200  
0
200  
400  
600  
800  
1000  
1200  
Frequency (MHz)  
Frequency (MHz)  
Figure 6. Insertion Loss – RFC to RF2  
Figure 7. Isolation – RFC to RF1  
0
0
-20  
-0.25  
-40 8C  
-0.5  
-40  
-0.75  
85 8C  
25 8C  
-60  
-1  
-1.25  
-1.5  
-80  
-100  
0
200  
400  
600  
800  
1000  
1200  
0
200  
400  
600  
800  
1000  
1200  
Frequency (MHz)  
Frequency (MHz)  
Document No. 70-0097-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 3 of 7  
PE4231  
Product Specification  
Typical Performance Data @ -40 °C to 85 °C (Unless Otherwise Noted)  
Figure 8. Isolation – RFC to RF2  
Figure 9. Isolation – RF1 to RF2, RF2 to RF1  
0
0
-20  
-20  
RF2  
-40  
-40  
RF1  
-60  
-80  
-60  
-80  
-100  
-100  
0
200  
400  
600  
800  
1000  
1200  
0
200  
400  
600  
800  
1000  
1200  
Frequency (MHz)  
Frequency (MHz)  
Figure 10. Return Loss – RFC  
Figure 11. Return Loss – RF1, RF2  
0
0
-10  
-20  
-30  
-40  
-10  
RF2  
-20  
RF1  
-30  
-40  
0
200  
400  
600  
800  
1000  
1200  
0
200  
400  
600  
800  
1000  
1200  
Frequency (MHz)  
Frequency (MHz)  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0097-01 UltraCMOS™ RFIC Solutions  
Page 4 of 7  
PE4231  
Product Specification  
Figure 8. Evaluation Board Layouts  
Evaluation Kit  
The SPDT Switch Evaluation Kit board was  
designed to ease customer evaluation of the  
PE4231 SPDT switch. The RF common port is  
connected through a 75 transmission line to the  
top left BNC connector, J1. Port 1 and Port 2 are  
connected through 75 transmission lines to the  
top two BNC connectors on the right side of the  
board, J2 and J3. A through transmission line  
connects BNC connectors J4 and J5. This  
transmission line can be used to estimate the loss  
of the PCB over the environmental conditions  
being evaluated.  
The board is constructed of a two metal layer FR4  
material with a total thickness of 0.031”. The  
bottom layer provides ground for the RF  
transmission lines. The transmission lines were  
designed using a coplanar waveguide with ground  
plane model using a trace width of 0.021”, trace  
gaps of 0.030”, dielectric thickness of 0.028”,  
metal thickness of 0.0014” and εr of 4.4.  
J6 provides a means for controlling DC and digital  
inputs to the device. Starting from the lower left  
pin, the second pin to the right (J6-3) is connected  
to the device CNTL input. The fourth pin to the  
right (J6-7) is connected to the device VDD input.  
A decoupling capacitor (100 pF) is provided on  
both CNTL and VDD traces. It is the responsibility  
of the customer to determine proper supply  
decoupling for their design application. Removing  
these components from the evaluation board has  
not been shown to degrade RF performance.  
Figure 9. Evaluation Board Schematic  
VDD  
RF1  
J6-7  
J2  
100 pF  
Optional  
CNTL  
GND  
J6-3  
100 pF  
Optional  
GND  
RFC  
GND  
RF2  
J1  
J3  
J4  
J5  
Document No. 70-0097-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 5 of 7  
PE4231  
Product Specification  
Figure 14. Package Drawing  
8-lead MSOP  
TOP VIEW  
0.65BSC  
.525BSC  
12o REF  
8
7
6
5
R 0.90 MIN  
2.45±0.10  
2X  
R 0.90 MIN  
GAGE  
3.00±0.10  
PLANE  
0o  
6o  
12o REF  
0.25  
±0.15  
0.55  
0.51±0.13  
- B -  
0.95 BSC  
1
2
3
4
.25  
A
B
C
0.51±0.13  
- C -  
2.95±0.10  
0.86±0.08  
2.95±0.10  
1.10 MAX  
- A -  
+0.07  
3.00±0.10  
4.90±0.15  
0.10  
A
0.33  
0.10±0.05  
-0.08  
0.08  
A
B
C
3.00±0.10  
FRONT VIEW  
SIDE VIEW  
Table 6. Ordering Information  
Order Code  
4231-01  
Part Marking  
4231  
Description  
PE4231-08MSOP-50A  
Package  
8-lead MSOP  
Shipping Method  
50 units / Tube  
2000 units / T&R  
1 / Box  
4231-02  
4231  
PE4231-08MSOP-2000C  
PE4231-08MSOP-EK  
8-lead MSOP  
4231-00  
PE4231-EK  
4231  
Evaluation Kit  
4231-51  
PE4231G-08MSOP-50A  
PE4231G-08MSOP-2000C  
Green 8-lead MSOP  
Green 8-lead MSOP  
50 units / Tube  
2000 units / T&R  
4231-52  
4231  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Document No. 70-0097-01 UltraCMOS™ RFIC Solutions  
Page 6 of 7  
PE4231  
Product Specification  
Sales Offices  
United States  
Japan  
Peregrine Semiconductor Corp.  
9450 Carroll Park Drive  
San Diego, CA 92121  
Peregrine Semiconductor K.K.  
5A-5, 5F Imperial Tower  
1-1-1 Uchisaiwaicho, Chiyoda-ku  
Tokyo 100-0011 Japan  
Tel 1-858-731-9400  
Fax 1-858-731-9499  
Tel: 011-81-3-3502-5211  
Fax: 011-81-3-3502-5213  
Europe  
China  
Peregrine Semiconductor Europe  
Bâtiment Maine  
Peregrine Semiconductor  
28G, Times Square,  
No. 500 Zhangyang Road,  
Shanghai, 200122, P.R. China  
Tel: 011-86-21-5836-8276  
Fax: 011-86-21-5836-7652  
13-15 rue des Quatre Vents  
F- 92380 Garches, France  
Tel: 011- 33-1-47-41-91-73  
Fax : 011-33-1-47-41-91-73  
For a list of representatives in your area, please refer to our Web site at: www.psemi.com  
Data Sheet Identification  
Advance Information  
The information in this data sheet is believed to be reliable.  
However, Peregrine assumes no liability for the use of this  
information. Use shall be entirely at the user’s own risk.  
The product is in a formative or design stage. The data  
sheet contains design target specifications for product  
development. Specifications and features may change in  
any manner without notice.  
No patent rights or licenses to any circuits described in this  
data sheet are implied or granted to any third party.  
Preliminary Specification  
Peregrine’s products are not designed or intended for use in  
devices or systems intended for surgical implant, or in other  
applications intended to support or sustain life, or in any  
application in which the failure of the Peregrine product could  
create a situation in which personal injury or death might occur.  
Peregrine assumes no liability for damages, including  
consequential or incidental damages, arising out of the use of  
its products in such applications.  
The data sheet contains preliminary data. Additional data  
may be added at a later date. Peregrine reserves the right  
to change specifications at any time without notice in order  
to supply the best possible product.  
Product Specification  
The data sheet contains final data. In the event Peregrine  
decides to change the specifications, Peregrine will notify  
customers of the intended changes by issuing a DCN  
(Document Change Notice).  
The Peregrine name, logo, and UTSi are registered trademarks  
and UltraCMOS is a trademark of Peregrine Semiconductor  
Corp.  
Document No. 70-0097-01 www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
Page 7 of 7  

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