P5C164X350L32MB [PYRAMID]
EEPROM, 8KX8, 350ns, Parallel, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32;
| 型号： | P5C164X350L32MB |
| 厂家： | 
PYRAMID SEMICONDUCTOR CORPORATION |
| 描述： | EEPROM, 8KX8, 350ns, Parallel, CMOS, CQCC32, 0.450 X 0.550 INCH, CERAMIC, LCC-32 可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器 内存集成电路 |
| 文件： | 总11页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
P5C164
8K x 8 EEPROM
FEATURES
Access Times of 200, 250, 300 and 350 ns
Single 5V±10% Power Supply
Software Data Protection
Fully TTL Compatible Inputs and Outputs
Endurance:10,000or100,000Cycles
Data Retention: 100 Years
Simple Byte and Page Write
Low Power CMOS:
- 60 mA Active Current
- 200 µA Standby Current
Available in the following Packages:
– 32-Pin Ceramic LCC (450 x 550 mils)
– 28-Pin 600 mil Ceramic DIP
Fast Write Cycle Times
DESCRIPTION
PIN CONFIGURATIONS
TheP5C164isa5Volt8Kx8EEPROMusingfloatinggate
CMOS Technology. The device supports 64-byte page
writeoperation. TheP5C164featuresDATAandToggle
Bit Polling as well as a system software scheme used to
indicate early completion of a Write Cycle. The device
also includes user-optional software data protection.
Enduranceis10,000or100,000CyclesandDataReten-
tionis100Years. Thedeviceisavailableina32-PinLCC
package as well as a 28-Pin 600 mil wide Ceramic DIP.
DIP (C5-1)
FUNCTIONAL BLOCK DIAGRAM
LCC (L6)
Document # EEPROM101 REV OR
Revised July 2006
1
P5C164
MAXIMUMRATINGS(1)
Symbol
Parameter
Value
Unit
Symbol
Parameter
Value
Unit
VCC
Power Supply Pin with
Respect to GND
–0.3 to +6.25
V
TBIAS
TemperatureUnder
Bias
–55 to +125
°C
TerminalVoltagewith
Respect to GND
(up to 6.25V)
–0.5 to
+6.25
TSTG
PT
StorageTemperature
PowerDissipation
DCOutputCurrent
–65 to +150
°C
W
VTERM
TA
V
1.0
50
IOUT
mA
OperatingTemperature
–55 to +125 °C
CAPACITANCES(4)
RECOMMENDED OPERATING
VCC = 5.0V, TA = 25°C, f = 1.0MHz
TEMPERATURE AND SUPPLY VOLTAGE
Ambient
Temperature
Grade(2)
GND
Symbol
Parameter
Conditions Typ. Unit
VCC
Military
5.0V ± 10%
CIN
–55°Cto+125°C
0V
VIN = 0V
pF
pF
InputCapacitance
10
10
COUT
VOUT = 0V
OutputCapacitance
DC ELECTRICAL CHARACTERISTICS
Overrecommendedoperatingtemperatureandsupplyvoltage(2)
P5C164
Symbol
Parameter
TestConditions
Unit
Min
Max
VIH
VIL
2.0
VCC +0.3
V
V
InputHighVoltage
InputLowVoltage
–0.5(3)
0.8
VCC –0.2
VCC +0.5
VHC
VLC
V
V
CMOS Input High Voltage
CMOS Input Low Voltage
–0.5(3)
0.2
0.4
OutputLowVoltage
(TTLLoad)
VOL
V
V
IOL = +8 mA, VCC = Min.
IOH = –4 mA, VCC = Min.
OutputHighVoltage
(TTLLoad)
VOH
2.4
VCC = Max.
ILI
–10
+10
+10
µA
InputLeakageCurrent
OutputLeakageCurrent
VIN = GND to VCC
VCC = Max., CE = VIH,
–10
___
µA
ILO
VOUT = GND to VCC
CE ≥ VIH, OE = VIL,
VCC= Max,
f = Max., Outputs Open
Standby Power Supply
Current(TTLInputLevels)
ISB
3
mA
CE ≥ VHC,
Standby Power Supply
Current
(CMOSInputLevels)
VCC= Max,
ISB1
___
___
250
µA
f = 0, Outputs Open
VIN ≤ VLC or VIN ≥ VHC
CE = OE = VIL,
WE = VIH,
All I/O's = Open,
Inputs = VCC = 5.5V
SupplyCurrent
ICC
60
mA
Notes:
2. Extended temperature operation guaranteed with 400 linear feet per
minute of air flow.
3. Transient inputs with VIL and IIL not more negative than –3.0V and
–100mA, respectively, are permissible for pulse widths up to 20ns.
4. This parameter is sampled and not 100% tested.
1. Stresses greater than those listed under MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification
is not implied. Exposure to MAXIMUM rating conditions for extended
periods may affect reliability.
Document # EEPROM101 REV OR
Page 2 of 11
P5C164
AC ELECTRICAL CHARACTERISTICS—READ CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-200
-250
-300
-350
Symbol
Parameter
Unit
Min Max Min Max Min Max Min Max
tAVAV Read Cycle Time
200
250
300
350
ns
350 ns
350 ns
100 ns
ns
tAVQV Address Access Time
200
200
100
250
250
100
300
300
100
tELQV Chip Enable Access Time
tOLQV Output Enable Access Time
tELQX Chip Enable to Output in Low Z
tEHQZ Chip Disable to Output in High Z
tOLQX Output Enable to Output in Low Z
tOHQZ Output Disable to Output in High Z
tAVQX Output Hold from Address Change
10
10
0
10
10
0
10
10
0
10
10
0
80
80
80
80
80
80
80
ns
ns
ns
ns
80
tPU
tPD
Chip Enable to Power Up Time
250
50
250
50
250
50
250 ns
50 ns
Chip Disable to Power Down Time
TIMING WAVEFORM OF READ CYCLE
Document # EEPROM101 REV OR
Page 3 of 11
P5C164
AC CHARACTERISTICS—WRITE CYCLE
(VCC = 5V ± 10%, All Temperature Ranges)(2)
-200
-250
-300
-350
Symbol
Parameter
Write Cycle Time
Unit
Min Max Min Max Min Max Min Max
tWHWL1
tEHEL1
tAVEL
tAVWL
tELA X
10
10
10
10
ms
Address Setup Time
Address Hold Time
Write Setup Time
20
20
20
20
ns
ns
150
150
150
150
tWLAX
tWLEL
tELWL
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
tWHEH Write Hold Time
tOHEL
Setup Time
20
20
150
20
20
150
20
20
150
20
20
150
OE
OE
WE
tOHWL
tWHOL
tELEH
Hold Time
Pulse Width
tWLWH
tDVEH
tDVWH
tEHDX
Data Setup Time
Data Hold Time
50
10
50
10
50
10
50
10
ns
ns
µs
tWHDX
tEHEL2
tWHWL2
tELWL
Byte Load Cycle Time
0.2
2
0.2
2
0.2
2
0.2
2
Setup Time
1
1
1
1
1
1
1
1
µs
µs
µs
µs
ms
ns
V
CE
tOVHWL Output Setup Time
tEHWH
tWHOH
Hold Time
Hold Time
1
1
1
1
CE
OE
1
1
1
1
tOHAV Erase Time
200
150
12
200
150
12
200
150
12
200
150
12
tWLWH2 Chip Erase Time
VH
High Voltage for Chip Clear
13
13
13
13
Document # EEPROM101 REV OR
Page 4 of 11
P5C164
TIMING WAVEFORM OF BYTE WRITE CYCLE (CE CONTROLLED)
TIMING WAVEFORM OF BYTE WRITE CYCLE (WE CONTROLLED)
Document # EEPROM101 REV OR
Page 5 of 11
P5C164
TIMING WAVEFORM OF PAGE WRITE CYCLE
TIMING WAVEFORM OF CHIP CLEAR CYCLE
Document # EEPROM101 REV OR
Page 6 of 11
P5C164
WRITE SEQUENCE FOR SOFTWARE
DATA PROTECTION
SOFTWARE SEQUENCE TO
DE-ACTIVATE SOFTWARE DATA
PROTECTION
Document # EEPROM101 REV OR
Page 7 of 11
P5C164
AC TEST CONDITIONS
TRUTH TABLE
InputPulseLevels
GND to 3.0V
10ns
Mode
I/O
CE
OE
WE
Input Rise and Fall Times
InputTimingReferenceLevel
OutputTimingReferenceLevel
OutputLoad
Read
VIL
VIL
VIL
X
VIL
VH
VIH
VIL
X
VIH
VIL
VIL
X
DOUT
1.5V
Chip clear
Byte write
Write inhibit
Write inhibit
Standby
X
1.5V
DIN
See Fig. 1
High Z/DOUT
High Z/DOUT
High Z
X
VIH
X
VIH
X
FIGURE 1. OUTPUT LOAD
Document # EEPROM101 REV OR
Page 8 of 11
P5C164
ORDERING INFORMATION
ENDURANCE
DEVICE
P5C164
P5C164X
MINIMUM ENDURANCE
10,000 cycles (Standard)
100,000 cycles (High Endurance)
Document # EEPROM101 REV OR
Page 9 of 11
P5C164
Pkg #
SIDE BRAZED DUAL IN-LINE PACKAGE (600 mils)
C5-1
# Pins
28 (600 mil)
Symbol
Min
-
0.014
0.045
0.008
-
Max
A
b
b2
C
D
E
0.232
0.026
0.065
0.018
1.490
0.610
0.500
eA
e
0.600 BSC
0.100 BSC
L
0.125
0.200
Q
S1
S2
0.015
0.005
0.005
0.060
-
-
RECTANGULAR LEADLESS CHIP CARRIER
Pkg #
# Pins
Symbol
A
L6
32
Min
Max
0.060
0.050
0.022
0.442
0.075
0.065
0.028
0.458
A1
B1
D
D1
D2
D3
E
0.300 BSC
0.150 BSC
-
0.458
0.560
0.540
E1
E2
E3
e
h
j
0.400 BSC
0.200 BSC
-
0.558
0.050 BSC
0.040 REF
0.020 REF
L
L1
L2
0.045
0.045
0.075
0.055
0.055
0.095
ND
NE
7
9
Document # EEPROM101 REV OR
Page 10 of 11
P5C164
REVISIONS
DOCUMENTNUMBER:
DOCUMENTTITLE:
EEPROM101
P5C164 8K x 8 EEPROM
ORIG. OF
CHANGE
ISSUE
DATE
REV.
DESCRIPTIONOFCHANGE
OR
Jul-06
JDB
NewDataSheet
Document # EEPROM101 REV OR
Page 11 of 11
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