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BY255 SILICON RECTIFIER DIODES
型号:   BY255
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描述:   SILICON RECTIFIER DIODES
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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  浏览型号BY255的Datasheet PDF文件第2页  
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BY251 - BY255
PRV : 200 - 1300 Volts
Io : 3.0 Amperes
FEATURES :
*
*
*
*
*
*
High current capability
High surge current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
SILICON RECTIFIER DIODES
DO - 201AD
1.00 (25.4)
MIN.
0.21 (5.33)
0.19 (4.83)
0.375 (9.53)
0.285 (7.24)
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.929 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50
°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 3.0 Amps.
Maximum DC Reverse Current
at rated DC Blocking Voltage
Ta = 25
°C
Ta = 100
°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F
BY251
200
140
200
BY252
400
280
400
BY253
600
420
600
3.0
BY254
800
560
800
BY255
1300
910
1300
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
R(H)
C
J
R
θ
JA
T
J
T
STG
100
1.1
20
50
50
18
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0V
DC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
Page 1 of 2
Rev. 02 : March 25, 2005
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