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BZX55C4V3 SILICON ZENER DIODES
型号:   BZX55C4V3
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描述:   SILICON ZENER DIODES
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BZX55C2V0 ~ BZX55C100
V
Z
: 2.0 - 100 Volts
P
D
: 500 mW
SILICON ZENER DIODES
DO - 35
0.079(2.0 )max.
1.00 (25.4)
min.
FEATURES :
* Complete 2.0 to 100 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
0.150 (3.8)
max.
0.020 (0.52)max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MECHANICAL DATA
* Case : Molded glass
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end. When operated in zener mode,
cathode will be positive with respect to anode
* Mounting position : Any
* Weight : 0.13 gram (approx.)
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note1)
Maximum Forward Voltage at I
F
=100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
P
D
V
F
R
θ
JA
T
j
T
s
Value
500
1.0
300
- 65 to + 200
- 65 to + 200
Unit
mW
V
°C/W
°C
°C
Note
: (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Page 1 of 2
Rev. 05 : June 25, 2005
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