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IXGH17N100AU1 Low VCE(sat) IGBT with Diode High speed IGBT with Diode
型号:   IXGH17N100AU1
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描述:   Low VCE(sat) IGBT with Diode High speed IGBT with Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
V
CES
Low V
CE(sat)
IGBT with Diode
High speed IGBT with Diode
IXGH 17 N100U1
IXGH 17 N100AU1
1000 V
1000 V
I
C25
34 A
34 A
V
CE(sat)
3.5 V
4.0 V
Combi Packs
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 82
Clamped inductive load, L = 100
µH
T
C
= 25°C
Maximum Ratings
1000
1000
±20
±30
34
17
68
I
CM
= 34
@ 0.8 V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
W
°C
°C
°C
l
l
l
l
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
l
l
International standard package
JEDEC TO-247 AD
IGBT and anti-parallel FRED in one
package
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low I
RM
Applications
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1000
2.5
T
J
= 25°C
T
J
= 125°C
5.5
500
8
±100
17N100U1
17N100AU1
3.5
4.0
V
V
µA
mA
nA
V
V
l
l
l
l
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 4.5 mA, V
GE
= 0 V
= 500
µA,
V
CE
= V
GE
l
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
l
l
l
Saves space (two devices in one
package)
Easy to mount (isolated mounting
screw hole)
Reduces assembly time and cost
© 1996 IXYS All rights reserved
91754D (3/96)
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