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GBPC2508 GLASS PASSIVATED SINGLE
型号:   GBPC2508
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描述:   GLASS PASSIVATED SINGLE
文件大小 :   95 K    2 页
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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  浏览型号GBPC2508的Datasheet PDF文件第2页  
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Certificate TH97/10561QM
Certificate TW00/17276EM
GBPC25005 - GBPC2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
*
*
*
*
*
*
*
Glass passivated junction chip
High surge current capability
High current capability
High reliability
Low reverse current
Low forward voltage drop
Pb / RoHS Free
GLASS PASSIVATED SINGLE-
PHASE BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) 1.130(28.70)
0.618(15.70) 1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.210(5.30)
0.200(5.10)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.252(6.40)
0.248(6.30)
φ
0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
0.310(7.87)
0.280(7.11)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°
C ambient temperature unless otherwise noted.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50 °C
Peak Forward Surge Current Single Sine Wave
Superimposed on Rated Load
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)
Maximum Instantaneous Forward
Voltage Drop Per Diode
Maximum DC Reverse Current at
Rated DC Blocking Voltage Per Diode
Ta = 25 °C
Ta = 125 °C
at I
F
= 12.5 A
(1)
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
ӨJC
T
J,
T
STG
GBPC GBPC GBPC GBPC GBPC GBPC GBPC
25005 2501 2502 2504 2506 2508 2510
50
100
200
400
600
800
1000
35
50
70
100
140
200
280
400
25
300
375
1.1
5
500
300
1.9
- 55 to + 150
420
600
560
800
700
1000
UNIT
V
V
V
A
A
A
2
sec
V
μA
μA
pF
°C/W
°C
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)
Typical Thermal Resistance form Junction to Case
Operating Junction and Storage Temperature Range
Note :
(1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.
Page 1 of 2
Rev. 00 : June 25, 2007
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