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VI-BN4-IV  L63500A0GC-30  L630-0UY-028M  VI-BN4-CX  L630-0UY-028W  L630-0UY-120AW  L630-0UR-036N  L630-0UY-024N  VI-BN3-IY  VI-BN4-CV  
GBU806 Glass Passivated
型号:   GBU806
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描述:   Glass Passivated
文件大小 :   52 K    2 页
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品牌   EIC [ EIC DISCRETE SEMICONDUCTORS ]
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  浏览型号GBU806的Datasheet PDF文件第2页  
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GBU8005 ~ GBU810
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* Surge overload rating - 200 Amperes peak
* Ideal for printed circuit boards
* Reliable low cost construction utilizing
molded plastic technique
* Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
* Mounting Position : Any
* Pb / RoHS Free
Glass Passivated
Single-Phase Bridge Rectifiers
0.88 (22.3)
0.86 (21.8)
0.740 (18.8)
0.720 (18.3)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.850 (2.16)
0.080 (2.03)
0.065 (1.65)
0.187 (4.7)
0.148 (3.8)
o
9 Typ.
~ ~
+
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Output Current Tc=100°C
(with heatsink note2)
(without heatsink )
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JC
T
J
T
STG
T
J
= 25
°C
T
J
= 100
°C
GBU
8005
50
35
50
GBU
801
100
70
100
GBU
802
200
140
200
GBU
804
400
280
400
8.0
3.2
200
166
1.0
5.0
500
60
2.2
GBU
806
600
420
600
0.080 (2.03)
0.060 (1.52)
GBU
808
800
560
800
0.720 (18.29)
0.680 (17.27)
0.060 (1.52)
0.045 (1.14)
GBU
810
1000
700
1000
UNIT
V
V
V
A
A
A
2
S
V
µA
pF
°C/W
°C
°C
Peak Forward Surge Current, 8.3ms Single half sine-
wave Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
Maximum Instantaneous Forward Voltage at I
F
= 4 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
Typical Junction capacitance per element (Note1)
- 50 to + 150
- 50 to + 150
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
(2) Device mounted on 100mm x 100mm x 1.6mm Cu. Plate heatsink.
Page 1 of 2
Rev. 02 : March 25, 2005
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