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IXFH69N30P Polar HiPerFET Power MOSFET
型号:   IXFH69N30P
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描述:   Polar HiPerFET Power MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Polar
TM
HiPerFET
TM
Power MOSFET
IXFH69N30P
IXFT69N30P
V
DSS
I
D25
t
rr
R
DS(on)
=
=
300V
69A
49mΩ
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-247)
TO-247
TO-268
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1M
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
300
300
± 20
± 30
69
200
69
1.5
20
500
-55 to +150
+150
-55 to +150
300
260
1.13/10
6
4
V
V
V
V
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-247 (IXFH)
G
D
S
D (Tab)
TO-268 (IXFT)
G
S
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Fast Intrinsic Diode
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250µA
V
DS
= V
GS
, I
D
= 4mA
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
300
2.5
5.0
V
V
±100 nA
25 µA
250 µA
49 mΩ
Applications
DC-DC Coverters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC and DC Motor Drives
Uninterrupted Power Supplies
High Speed Power Switching
Applications
© 2009 IXYS CORPORATION, All Rights Reserved
DS99220F(10/09)
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