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IXFH96N15P PolarHT HiPerFET Power MOSFET
型号:   IXFH96N15P
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描述:   PolarHT HiPerFET Power MOSFET
文件大小 :   318 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
PolarHT
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Energy Rated
Fast Intrinsic Diode
IXFH 96N15P
IXFV 96N15P
IXFV 96N15PS
V
DSS
= 150 V
I
D25
= 96 A
R
DS(on)
24 mΩ
t
rr
200 ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
F
C
M
d
Weight
Test Conditions
T
J
= 25° C to 175° C
T
J
= 25° C to 175° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
175° C, R
G
= 4
T
C
= 25° C
Maximum Ratings
150
150
±20
±30
96
75
250
60
40
1.0
10
480
-55 ... +175
175
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
N/lb
l
l
G
D
S
(TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV__S)
G
S
D (TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10s
Mounting force
Mounting torque
TO-247
PLUS220
(PLUS220)
(TO-247)
300
260
11...65/2.4...11
G = Gate
S = Source
D = Drain
TAB = Drain
Features
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
1.13/10 Nm/lb.in.
6
4
g
g
l
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 175° C
Characteristic Values
Min. Typ.
Max.
150
3.0
5.0
±100
25
1000
24
V
V
nA
µA
µA
m
Advantages
l
l
l
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2006 IXYS All rights reserved
DS99208E(12/05)
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