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IXFK102N30P PolarHT HiPerFET Power MOSFET
型号:   IXFK102N30P
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描述:   PolarHT HiPerFET Power MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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Preliminary Technical Information
PolarHT
TM
HiPerFET
IXFK 102N30P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque, Terminal lead torque
TO-264
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150° C, R
G
= 4
T
C
= 25° C
Maximum Ratings
300
300
±20
±30
102
75
250
60
60
2.5
10
700
-55 ... +150
150
-55 ... +150
300
260
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°
C
°C
V
DSS
I
D25
R
DS(on)
t
rr
=
=
300 V
102 A
33 mΩ
200 ns
TO-264 (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
Features
l
l
l
1.13/10 Nm/lb.in.
10
g
International standard package
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
l
l
l
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±200
25
250
33
V
V
nA
µA
µA
m
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2006 IXYS All rights reserved
DS99221E(05/06)
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