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IXFK170N10P Polar HiperFET Power MOSFET
型号:   IXFK170N10P
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描述:   Polar HiperFET Power MOSFET
文件大小 :   140 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Polar
TM
HiperFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
IXFH170N10P
IXFK170N10P
V
DSS
I
D25
R
DS(on)
t
rr
= 100V
= 170A
9mΩ
Ω
150ns
TO-247 (IXFH)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
L(RMS)
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 175°C
T
J
= 25°C to 175°C, R
GS
= 1M
Ω
Continuous
Transient
T
C
= 25°C
External Lead Current Limit
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
175°C
T
C
= 25°C
Maximum Ratings
100
100
± 20
± 30
170
160
350
60
2
10
715
-55 to +175
+175
-55 to +175
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
G
G
D
S
Tab
TO-264 (IXFK)
D
S
Tab
G = Gate
S = Source
D
= Drain
Tab = Drain
Features
International Standard Packages
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
1.6mm (0.063in) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-247
TO-264
300
260
1.13/10
6
10
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 4mA
V
GS
= ± 20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150°C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
V
GS
= 15V, I
D
= 350A
Characteristic Values
Min.
Typ.
Max.
100
2.5
5.0
V
V
±100 nA
25
μA
500
μA
7
9 mΩ
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
© 2010 IXYS CORPORATION, All Rights Reserved
DS99380F(01/10)
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