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IXFK44N80P PolarHV HiPerFET Power MOSFET
型号:   IXFK44N80P
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描述:   PolarHV HiPerFET Power MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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PolarHV
TM
HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 44N80P
IXFX 44N80P
V
DSS
I
D25
R
DS(on)
t
rr
= 800
V
= 44
A
190 mΩ
Ω
250 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/μs, V
DD
V
DSS
,
T
J
150°C, R
G
= 10
Ω
T
C
= 25°C
Maximum Ratings
800
800
±
30
±
40
44
100
22
80
3.4
10
1040
-55 ... +150
150
-55 ... +150
V
V
V
V
TO-264 (IXFK)
G
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°
C
°
C
D
S
(TAB)
PLUS247 (IXFX)
(TAB)
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
Mounting force
(IXFK)
(IXFX)
(IXFK)
(IXFX)
300
260
G = Gate
S = Source
D = Drain
TAB = Drain
1.13.10 Nm/lb.in.
20..120 /4.5..25
10
5
N/lb
g
g
Features
Fast intrinsic diode
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T
J
= 25°C unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 800
μA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±
30 V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
800
3.0
5.0
±
200
50
1.5
190
V
V
nA
μA
mA
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
, Note 1
© 2006 IXYS All rights reserved
DS99478E(01/06)
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