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IXFN80N50 HiPerFET Power MOSFETs Single Die MOSFET
型号:   IXFN80N50
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描述:   HiPerFET Power MOSFETs Single Die MOSFET
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品牌   IXYS [ IXYS CORPORATION ]
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HiPerFET
TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
IXFN 80N50
D
V
DSS
I
D25
R
DS(on)
t
rr
= 500 V
= 80 A
= 55 mΩ
250 ns
G
S
S
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
V
ISOL
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25°C, Chip capability
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 2
T
C
= 25°C
Maximum Ratings
500
500
±20
±30
80
320
80
64
6
5
780
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal of miniBLOC can be used
as Main or Kelvin Source
Features
International standard package
miniBLOC,
with Aluminium nitride
50/60 Hz, RMS
I
ISOL
1 mA
t = 1 min
t=1s
2500
3000
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
Fast intrinsic Rectifier
Applications
DC-DC converters
rated
Low package inductance
isolation
Low R
DS (on)
HDMOS
TM
process
Mounting torque
Terminal connection torque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
500
2.5
4.5
±200
T
J
= 25°C
T
J
= 125°C
100
2
55
V
V
nA
µA
mA
mΩ
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 3 mA
V
DS
= V
GS
, I
D
= 8 mA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
GS
= 10 V, I
D
= 0.5 • I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
Advantages
Easy to mount
Space savings
High power density
© 2003 IXYS All rights reserved
DS98538E(12/03)
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