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IXFP10N60P Polar HiPerFET Power MOSFET
型号:   IXFP10N60P
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描述:   Polar HiPerFET Power MOSFET
文件大小 :   147 K    4 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Polar
TM
HiPerFET
TM
Power MOSFET
IXFA10N60P
IXFP10N60P
V
DSS
I
D25
t
rr
R
DS(on)
= 600V
= 10A
740mΩ
Ω
200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263 AA (IXFA)
G
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
sold
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
600
600
±30
±40
10
25
10
500
10
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
Features
G = Gate
S = Source
G
DS
S
D (Tab)
TO-220AB (IXFP)
D (Tab)
D
= Drain
Tab = Drain
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
International Standard Packages
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low Q
G
Low R
DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
V
GS
= 10V, I
D
= 0.5 • I
D25
, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
600
3.0
5.5
V
V
±100
nA
25
500
μA
μA
740 mΩ
© 2010 IXYS CORPORATION, All Rights Reserved
DS99424F(04/10)
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