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2SC2655_06  2SC2688L-M-T60-C-K  2SC2655-X-T9N-R  2SC2655L-X-T9N-K  2SC2655  2SC2703  2SC2655L-Y-T9N-R  2SC2655-X-T9N-K  2SC2655-Y-T9N-R  2SC2655L-Y-T9N-K  
IXFP12N50P Polar Power MOSFET HiperFET
型号:   IXFP12N50P
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描述:   Polar Power MOSFET HiperFET
文件大小 :   144 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Polar
TM
Power MOSFET
HiperFET
TM
N-Channel Enhancement Mode
Avalanche Rated
IXFA12N50P
IXFP12N50P
V
DSS
I
D25
R
DS(on)
= 500V
= 12A
500mΩ
Ω
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
Maximum Ratings
500
500
±30
±40
12
30
12
600
20
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-263 (IXFA)
G
S
(TAB)
TO-220 (IXFP)
G
D S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
(TO-220)
300
260
1.13 / 10
2.5
3.0
Features
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250μA
V
DS
= V
GS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.5
V
V
±100
nA
5
250
μA
μA
V
GS
= 10V, I
D
=
0.5
I
D25
, Note 1
500 mΩ
© 2008 IXYS CORPORATION, All rights reserved
DS99436F(04/08)
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