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IXFX180N10 HiperFET Power MOSFETs
型号:   IXFX180N10
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描述:   HiperFET Power MOSFETs
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiperFET
TM
Power
MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dV/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Force
MountingTorque
PLUS247
TO-264
(PLUS247)
(TO-264)
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C ( Chip Capabitlty)
Leads Current Limit, RMS
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, V
DD
V
DSS
, T
J
150°C
T
C
= 25°C
IXFK180N10
IXFX180N10
V
DSS
I
D25
R
DS(on)
=
=
100V
180A
8mΩ
Ω
TO-264 (IXFK)
Maximum Ratings
100
100
±20
±30
180
160
720
180
3
5
560
-55 ... +150
150
-55 ... +150
300
260
20..120/4.5..27
1.13/10
6
10
V
V
V
V
A
A
A
A
J
V/ns
W
°C
°C
°C
°C
°C
N/lb.
Nm/lb.in.
g
g
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
G
D
(TAB)
S
PLUS247 (IXFX)
Features
International Standard Packages
High Current Handling Capability
Avalanche Rated
Low R
DS(on)
HDMOS
TM
Process
Fast intrinsic diode
Low Package Inductance
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
DC-DC Converters
Battery Chargers
Switched-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Temperature and Lighting Controls
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 3mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±20V,
V
DS
= 0V
V
DS
= V
DSS
V
GS
= 0V
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
T
J
= 125°C
Characteristic Values
Min. Typ. Max.
100
2.0
4.0
V
V
±100
nA
100
μA
2 mA
8 mΩ
© 2009 IXYS CORPORATION, All Rights Reserved
DS98552D(02/09)
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