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IXGH16N60C2D1 HiPerFAST IGBTs C2-Class High Speed w/ Diode
型号:   IXGH16N60C2D1
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描述:   HiPerFAST IGBTs C2-Class High Speed w/ Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFAST
TM
IGBTs
C2-Class High Speed
w/ Diode
IXGA16N60C2D1
IXGP16N60C2D1
IXGH16N60C2D1
V
CES
=
I
C110
=
V
CE(sat)
t
fi(typ)
=
600V
16A
3.0V
33ns
TO-263 AA (IXGA)
G
E
C (Tab)
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C110
I
F110
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
F
C
T
L
T
SOLD
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GE
= 1MΩ
Continuous
Transient
T
C
T
C
T
C
T
C
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
Maximum Ratings
600
600
±20
±30
40
16
11
100
I
CM
= 32
V
CE
V
CES
150
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
A
W
°C
°C
°C
Nm/lb.in.
N/lb.
°C
°C
g
g
g
TO-220AB (IXGP)
G
CE
C (Tab)
TO-247 (IXGH)
V
GE
= 15V, T
J
= 125°C, R
G
= 22Ω
Clamped Inductive load
T
C
= 25°C
G
C
D
E
S
C (Tab)
Mounting Torque (TO-220 & TO-247)
Mounting Force (TO-263)
1.13/10
10..65 / 2.2..14.6
300
260
2.5
3.0
6.0
G = Gate
E = Emitter
Features
C = Collector
Tab = Collector
Maximum Lead Temperature for Soldering
1.6mm (0.062 in.) from Case for 10s
TO-263
TO-220
TO-247
Optimized for Low Switching Losses
Square RBSOA
Anti-Parallel Ultra Fast Diode
International Standard Packages
Advantages
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
= 250μA, V
CE
= V
GE
T
J
= 125°C
V
CE
= 0V, V
GE
=
±20V
I
C
= 12A, V
GE
= 15V, Note1
T
J
= 125°C
V
CE
= V
CES
, V
GE
= 0V
Characteristic Values
Min.
Typ.
Max.
3.0
5.5
V
25
μA
1 mA
±100
nA
3.0
1.8
V
V
High Power Density
Low Gate Drive Requirement
Applications
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
© 2010 IXYS CORPORATION, All Rights Reserved
DS99179B(08/10)
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