电子元器件数据表 IC PDF查询
English 中文版
  品牌   我要上传
型号:  
描述:
AFL27005SX/CH  AFL27007SX/HB  AFL27005SY  AFL27008DW-ES  AFL27006SX  XC6121F247ER  AFL27008DW-HB  AFL27005SW/HB  AFL27005SZ  AFL27007SZ/HB  
IXGH32N170A High Voltage IGBT
型号:   IXGH32N170A
PDF文件: 下载PDF文件   鼠标右键选目标另存为
网页直接浏览   不需安装PDF阅读软件
在线打开PDF文件   需安装PDF阅读软件
描述:   High Voltage IGBT
文件大小 :   574 K    5 页
Logo:   
品牌   IXYS [ IXYS CORPORATION ]
购买 :   
  浏览型号IXGH32N170A的Datasheet PDF文件第2页 浏览型号IXGH32N170A的Datasheet PDF文件第3页 浏览型号IXGH32N170A的Datasheet PDF文件第4页 浏览型号IXGH32N170A的Datasheet PDF文件第5页  
100%
High Voltage
IGBT
IXGH 32N170A
IXGT 32N170A
V
CES
I
C25
V
CE(sat)
t
fi(typ)
= 1700 V
=
32 A
=
5.0 V
=
50 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
P
C
T
J
T
JM
T
stg
M
d
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 5Ω
Clamped inductive load
T
J
= 125°C, V
CE
= 1200 V; V
GE
= 15 V, R
G
= 10Ω
T
C
= 25°C
Maximum Ratings
1700
1700
±20
±30
32
21
110
I
CM
= 70
@ 0.8 V
CES
10
350
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
TO-268 (IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C (TAB)
C
E
C = Collector,
TAB = Collector
µs
W
°C
°C
°C
G = Gate,
E = Emitter,
Mounting torque (M3)
(TO-247)
1.13/10Nm/lb.in.
300
°C
6
4
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Weight
TO-247
TO-268
Features
International standard packages
JEDEC TO-268 and
JEDEC TO-247 AD
High current handling capability
MOS Gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Applications
Capacitor discharge & pulser circuits
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
Advantages
High power density
Suitable for surface mounting
Easy to mount with 1 screw,
(isolated mounting screw hole)
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1700
3.0
Note 1
T
J
= 25°C
T
J
= 125°C
5.0
50
2
±100
T
J
= 25°C
T
J
= 125°C
4.0
4.8
5.0
V
V
µA
mA
nA
V
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
µA,
V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2004 IXYS All rights reserved
DS98942D(09/04)
首页 - - 友情链接
Copyright© 2001 - 2014 ICPDF All Rights Reserved ICPDF.COM

粤公网安备 44030402000629号


粤ICP备13051289号-7