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HD74HC114  
IXGH32N60CD1 HiPerFAST IGBT with Diode
型号:   IXGH32N60CD1
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描述:   HiPerFAST IGBT with Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFAST
TM
IGBT
with Diode
Light Speed Series
IXGH 32N60CD1
IXGT 32N60CD1
V
CES
I
C25
V
CE(SAT)typ
t
fi(typ)
= 600 V
= 60 A
= 2.1 V
= 55 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
Clamped inductive load @ 0.8 V
CES
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
60
32
120
I
CM
= 64
200
-55 ... +150
150
-55 ... +150
300
1.13/10
6
5
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-247 AD (IXGH)
G
C
E
C (TAB)
TO-268 (D3) ( IXGT)
G
E
C (TAB)
G = Gate
E = Emitter
C = Collector
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
TO-247 AD
TO-268
Features
International standard TO-247AD
package
High current handling capability
Latest generation HDMOS
TM
process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
High power density
Very fast switching speeds for high
frequency applications
High power surface mountable package
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5.0
200
3
±100
2.1
2.5
V
V
µA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250µA, V
GE
= 0 V
= 250
µA,
V
CE
= V
GE
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
© 2002 IXYS All rights reserved
97544E (6/02)
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