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OC-32A-3048T  CS2843A  OC-32A-20T  OC-32A-2027AT  OC-32-50AT  OC-32A-25AT  OC-32-2527T  OC-32A-2548AT  OC-32A-10027T  CS2A100KC  
IXFH26N50P Avalanche Rated Fast Instrinsic Diode
型号:   IXFH26N50P
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描述:   Avalanche Rated Fast Instrinsic Diode
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品牌   IXYS [ IXYS CORPORATION ]
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100%
PolarHV
TM
Power MOSFET
Avalanche Rated
Fast Instrinsic Diode
Preliminary Data Sheet
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
IXFH 26N50P
IXFV 26N50P
IXFV 26N50PS
V
DSS
I
D25
t
rr
R
DS(on)
=
=
500 V
26 A
230 mΩ
200 ns
Maximum Ratings
500
500
±
30
±
40
26
78
26
40
1.0
10
400
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
TO-247 (IXFH)
T
J
= 25°C to 150°C; R
GS
= 1 MΩ
Continuos
Transient
T
C
= 25°C
T
C
= 25°C, pulse width limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
,
T
J
150°C, R
G
= 4
T
C
= 25°C
D (TAB)
PLUS220 (IXFV)
G
D
S
D (TAB)
PLUS220SMD (IXFV_S)
1.6 mm (0.062 in.) from case for 10 s
Plastic body
Mounting torque
Mounting force
(TO-247)
(PLUS220SMD)
300
260
G
S
G = Gate
S = Source
D (TAB)
D = Drain
TAB = Drain
1.13/10 Nm/lb.in.
11..65/2.5..15
6
5
N/lb
g
g
TO-3P
PLUS220 & PLUS220SMD
Symbol
Test Conditions
(T
J
= 25°C, unless otherwise specified)
V
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±30
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125°C
Characteristic Values
Min. Typ.
Max.
500
3.0
5.0
±100
25
250
230
V
V
nA
µA
µA
mΩ
Features
International standard packages
Fast intrinsic diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Easy to mount
Space savings
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2005 IXYS All rights reserved
DS99276A(09/05)
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