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UT8CR512K32-17VCX UT8CR512K32 16 Megabit SRAM
型号:   UT8CR512K32-17VCX
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描述:   UT8CR512K32 16 Megabit SRAM
文件大小 :   318 K    16 页
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品牌   AEROFLEX [ AEROFLEX CIRCUIT TECHNOLOGY ]
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Standard Products
UT8CR512K32 16 Megabit SRAM
Advanced Data Sheet
October 2004
www.aeroflex.com/4MSRAM
FEATURES
17ns maximum access time
Asynchronous operation for compatibility with industry-
standard 512K x 8 SRAMs
CMOS compatible inputs and output levels, three-state
bidirectional data bus
- I/O Voltage 3.3 volts, 1.8 volt core
Radiation performance
- Intrinsic total-dose: 300 Krad(Si)
- SEL Immune >100 MeV-cm
2
/mg
- LET
th
(0.25): 53.0 MeV-cm
2
/mg
- Memory Cell Saturated Cross Section 1.67E-7cm
2
/bit
- Neutron Fluence: 3.0E14n/cm
2
- Dose Rate
- Upset 1.0E9 rad(Si)/sec
- Latchup 1.0E11 rad(Si)/sec
Packaging options:
- 68-lead ceramic quad flatpack (20.238 grams with lead
frame)
Standard Microcircuit Drawing 5962-04227
- QML compliant part
INTRODUCTION
The UT8CR512K32 is a high-performance CMOS static RAM
multi-chip module (MCM), organized as four individual
524,288 words by 8 bit SRAMs with common output enable.
Easy memory expansion is provided by active LOW chip
enables (EN), an active LOW output enable (G), and three-state
drivers. This device has a power-down feature that reduces
power consumption by more than 90% when deselected.
Writing to each memory is accomplished by taking the
corresponding chip enable (En) input LOW and write enable
(Wn) input LOW. Data on the I/O pins is then written into the
location specified on the address pins (A
0
through A
18
). Reading
from the device is accomplished by taking the chip enable (En)
and output enable (G) LOW while forcing write enable (Wn)
HIGH. Under these conditions, the contents of the memory
location specified by the address pins will appear on the I/O pins.
The input/output pins are placed in a high impedance state when
the device is deselected (En HIGH), the outputs are disabled (G
HIGH), or during a write operation (En LOW and Wn LOW).
Perform 8, 16, 24 or 32 bit accesses by making Wn along with
En a common input to any combination of the discrete memory
die.
W2
E1
W1
W0
E0
E3
A(18:0)
G
W3
E2
512K x 8
512K x 8
512K x 8
512K x 8
DQ(31:24)
or
DQ3(7:0)
DQ(23:16)
or
DQ2(7:0)
DQ(15:8)
or
DQ1(7:0)
DQ(7:0)
or
DQ0(7:0)
Figure 1. UT8CR512K32 SRAM Block Diagram
1
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