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ASG330 DC-2500 MHz SiGe HBT Amplifier
型号:   ASG330
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描述:   DC-2500 MHz SiGe HBT Amplifier
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品牌   ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
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ASG330
DC-2500 MHz SiGe HBT Amplifier
Features
·SiGe
Technology
·11
dB Gain at 1950 MHz
·+20
dBm P1dB
·+43
dBm Output IP3
·3.8
dB Noise Figure
·MTTF
> 100 Years
·Operate
at Single +5 V Supply
·SOT-89
Surface Mount Package
Description
The ASG330 is designed for high linearity, high
gain, and low noise over a wide range of
frequency, being suitable for use in both receiver
and
transmitter
of
wireless
and
wireline
is
telecommunication
systems.
The
product
manufactured using a state-of-the-art SiGe HBT
process of the company's own, making it cost-
effective and highly reliable. The amplifiers are
available in a low cost SOT-89
completing stringent DC and RF tests.
package
Package Style: SOT-89
Specifications
1)
Parameters
Frequency Range
Gain
1)
1)
1)
Applications
Units
MHz
dB
-
-
dBm
41
18
dB
dBm
mA
V
Min.
Typ.
250 - 2500
11
1.4
1.4
43
3.8
20
75
5
Max.
·CDMA,GSM,W-CDMA,PCS
WiBro, WLan
·PA
Driver Amplifier
·Gain
Block
·CATV
Amplifier
·IF
Amplifier
Input VSWR
Output IP3
2)
Output VSWR
Noise Figure
Output P1dB
1)
Supply Current
Supply Voltage
More Information
Website: www.asb.co.kr
E-mail: sales@asb.co.kr
Tel: (82) 42-528-7220
Fax: (82) 42-528-7222
ASB, Inc., 4F FI. VentureTown Bldg.,
367-17 Goijeong-Dong, Seo-Gu,
Daejon 302-120, Korea
1) Measurement conditions are as follows: T = 25°C, V
CC
= 5 V, Freq. = 1950 MHz, 50 ohm system.
2) OIP3 is measured with two tones at an output power of +10dBm/tone separated by 1MHz.
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Supply Voltage
Operating Junction Temperature
Input RF Power (continuous)
1)
Rating
-40 to
+
85°C
-40 to
+
150°C
8V
150°C
13 dBm
Remarks
1/9
November 2007
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