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ASX601 250-2500 MHz MMIC Amplifier
型号:   ASX601
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描述:   250-2500 MHz MMIC Amplifier
文件大小 :   759 K    13 页
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品牌   ASB [ ADVANCED SEMICONDUCTOR BUSINESS INC. ]
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100%
ASX601
250-2500 MHz MMIC Amplifier
Features
·16
dB Gain at 900 MHz
·32.7
dBm P1dB at 900 MHz
·49
dBm Output IP3 at 900 MHz
·MTTF
> 100 Years
·Single
Supply
Description
The ASX601, a power amplifier MMIC, has a high
linearity, high gain, and high efficiency over a wide
range of frequency, being suitable for use in both
receiver and transmitter of telecommunication sys-
tems up to 2.5 GHz. The amplifier is available in an
SOT-89 packa ge and passes through the stringent
DC, RF, and reliability tests.
ASX601
Package Style: SOT-89
Typical Performance
*
Parameters
Frequency
Gain
S11
S22
Output IP3
1)
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
900
16
-18
-14
49
5.6
32.7
850
5
Typical
2000
9.5
-14
-12
47
5.8
31
850
5
900
16
-18
-14
44
5.6
32
710
4.7
Typical
2000
9.5
-14
-12
43
5.8
31
710
4.7
Application Circuit
·440
~ 460 MHz
·715
~ 725 MHz
·CDMA
·RFID
(USA)
·GSM
·1400
~ 1500 MHz
·PCS
* Performance tested at 50
W
system and a room temperature.
1) OIP3 measured with two tones at an output power of +15 dBm/tone separated by 1 MHz.
Product Specifications*
Parameters
Testing Frequency
Gain
S11
S22
Output IP3
Noise Figure
Output P1dB
Current
Device Voltage
Units
MHz
dB
dB
dB
dBm
dB
dBm
mA
V
32
820
47
15
Min
Typ
900
16
-18
-14
49
5.6
32.7
850
5
900
5.9
Max
* 100% in-house DC & RF testing is done on packaged products before taping.
Pin Configuration
Absolute Maximum Ratings
Parameters
Operating Case Temperature
Storage Temperature
Device Voltage
Operating Junction Temperature
Input RF Power (CW, 50ohm matched)*
Rating
-40 to
+85°C
-40 to
+150°C
+6 V
+150°C
25 dBm
Pin No.
1
2
3
Function
RF IN
GND
RF OUT / Bias
* Please find the max. input power data from
http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
1/13
ASB Inc.
·
sales@asb.co.kr
·
Tel: +82-42-528-7223
December 2010
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