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EPA2200-35  EPA2200-90  EPA2200-45  EPA2200-40  EPA2200-22  EPA2200-60  EPA2200-25  EPA2200-50  EPA2200-6  EPA2200-5  
BA-3E12UW hi-eff red chips, which are made from GaAsP on GaP substrate
型号:   BA-3E12UW
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描述:   hi-eff red chips, which are made from GaAsP on GaP substrate
文件大小 :   179 K    3 页
Logo:   
品牌   BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
购买 :   
  浏览型号BA-3E12UW的Datasheet PDF文件第2页 浏览型号BA-3E12UW的Datasheet PDF文件第3页  
100%
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BA-3E12UW
1.
2.
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5.
Features :
Emitting area : 18.78×5.85(mm)
Low power requirement.
Package Dimensions :
19.80(.780)
0.50(.020)
6.80(.268)
Excellent characters appearance.
Solid state reliability.
Categorized for luminous intensity.
2.54(.100)
6.40(.252)
3.00(.118) MIN.
0.5(.020)
12.70(.50)
2.20(.087)
1.
2.
Description :
The BA-3E12UW had uniform
emitting light.
This product use hi-eff red chips,
which are made from GaAsP on
GaP substrate.
3.
4.
This product have a white face and
white segments.
This product doesn't contain restriction
substance, comply ROHS standard.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
Internal Circuit Diagram :
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