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BM-41EG57ND hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
型号:   BM-41EG57ND
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描述:   hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
文件大小 :   736 K    3 页
Logo:   
品牌   BRIGHT [ BRIGHT LED ELECTRONICS CORP ]
购买 :   
  浏览型号BM-41EG57ND的Datasheet PDF文件第2页 浏览型号BM-41EG57ND的Datasheet PDF文件第3页  
100%
BRIGHT LED ELECTRONICS CORP.
SINCE 1981
BM-41EG57ND
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Features :
4.118 inch (104.6mm) matrix height.
Square size 12.0 × 12.0mm.
Low power requirement.
Excellent characters appearance.
Multiplex drive , column cathode com.
and row anode com.
Multi color available.
Categorized for luminous intensity.
Stackable vertically and horizontally.
Solid state reliability.
Package Dimensions :
74.80(2.945)
104.60(4.118)
76.20(3.000)
PIN 1.
12.0x12.0
(.472x.472)
1.
Description :
The BM-41EG57ND is a
104.6mm (4.118")matrix
height 5×7 square matrix display.
This product use hi-eff red chips and
green chips, the hi-eff red chips are
made from GaAsP on GaP substrate,
the green chips are made from GaP
on GaP subtrate.
This product have a black face and
white squares.
This product doesn't contain restriction
substance, comply ROHS standard.
12.80(.504)
0.80(.031)
5.08x8=40.64(1.600)
3.00(.118) MIN.
2.
Notes:
1. All dimensions are in millimeters(inches).
2. Tolerance is ±0.25mm(.01")unless otherwise
specified.
3. Specifications are subject to change without
notice.
3.
4.
Internal Circuit Diagram :
½鴻工業股½有限公司
http://www.brtled.com
Ver.1.0 Page 1 of 3
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