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SM8Z 优恩半导体公司针对车用电子设备,推出全新产品SM8Z及S5Z系列,经车辆测试中心实际测试,SM8Z系列及SM5Z系列产品比我司之前生产的SM8S系列抗冲击能力更强,可媲美Vishay的SM8S系列及SM5S系列,能满足ISO-7637-2波形,5A抛负载脉冲测试,拥有极高的防护能力,从而大大提高了汽车电子产品的可靠性。
型号:   SM8Z
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描述:   优恩半导体公司针对车用电子设备,推出全新产品SM8Z及S5Z系列,经车辆测试中心实际测试,SM8Z系列及SM5Z系列产品比我司之前生产的SM8S系列抗冲击能力更强,可媲美Vishay的SM8S系列及SM5S系列,能满足ISO-7637-2波形,5A抛负载脉冲测试,拥有极高的防护能力,从而大大提高了汽车电子产品的可靠性。
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品牌   UNSEMI [ UN Semiconducctor INC ]
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100%
Surface Mount Transient Voltage Suppressors
SM8Z Series 14 To 43 V 6600W
Description
The SM8Z series is designed specifically to protect sensitive
electronic equipment from voltage transients induced by lightning
and other transient voltage events.
Working Voltage: 14 to 43 V
Peak Pulse Power: 6600 W
Features
Glass passivated chip
6600 W peak pulse power capability with a
10/1000 us waveform, repetitive rate (duty
cycle):0.01 %
T J = 175 ° capability suitable for high reliability
C
and automotive requirement
Meets ISO7637-2 surge specification (varied by test
condition)Meet AEC-Q101 requirement
Low leakage
Uni-directional polarity
Excellent clamping capability
Very fast response time
RoHS compliant
Mechanical Data
Case: DO-218AB
Epoxy: UL 94V-0 rate flame retardant
Polarity: Heatsink is anode
Primary Characteristics
V
RWM
P
PPM
(10/1000µs)
P
PPM
(10/10000µs)
P
D
I
FSM
T
J max.
Package
14V to 43V
6600W
5200W
8W
700A
175°
C
DO-218AB
Applications
Use in sensitive electronics protection against voltage transients
induced by inductive load switching and lighting, especially for
automotive load dump protection application
Maximum Ratings and Thermal Characteristics (T A =25
unless otherwise noted)
Parameter
with 10/1000µs waveform
Peak Pulse Power Dissipation
with 10/10000µs waveform
P
PPM
P
D
I
PP
I
FSM
T
J
, T
STG
R
θJC
Symbol
Value
6600
5200
8
See Next Table
700
–55
to +175
0.90
W
W
A
A
°C
°C
/Watt
Units
Power Dissipation on Infinite Heat Sink at T
L
=25° (Fig.1)
C
Peak Pulse Current with a 10/1000µs waveform
Peak forward surge current 8.3 ms single half sine Wave
Operating junction and storage temperature range
Typical thermal resistance, junction to case
Note:(1)Non-repetitive
current pulse per Fig.2 and derated above T A = 25 ° per Fig.1
C
UN Semiconductor Co., Ltd.
Revision February 2, 2015
www.unsemi.com.tw
1/4
@ UN Semiconductor Co., Ltd. 2013
Specifications are subject to change without notice.
Please refer to www.unsemi.com.tw for current information.
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