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IXGH41N60 Ultra-Low VCE(sat) IGBT
型号:   IXGH41N60
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描述:   Ultra-Low VCE(sat) IGBT
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品牌   IXYS [ IXYS CORPORATION ]
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100%
Ultra-Low V
CE(sat)
IGBT
IXGH 41N60
V
CES
= 600 V
I
C25
= 76 A
V
CE(sat)
= 1.6 V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
76
41
152
I
CM
= 76
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
W
°C
°C
°C
TO-247 AD
G
C
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• International standard package
JEDEC TO-247 AD
• Newest generation HDMOS
TM
process
• Low V
CE(sat)
- for minimum on-state conduction
losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
Applications
Mounting torque (M3)
1.13/10 Nm/lb.in.
6
300
g
°C
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 125°C
5
200
1
±100
1.6
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250
mA,
V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
AC motor speed control
DC servo and robot drives
DC choppers
Solid state relays
Lighting controls
Temperature regulators
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
Advantages
• Easy to mount with 1 screw
(isolated mounting screw hole)
• Low losses, high efficiency
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
97546(1/98)
© 2000 IXYS All rights reserved
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