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GH-039  
IXSH45N120 High Voltage, Low VCE(sat) IGBT
型号:   IXSH45N120
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描述:   High Voltage, Low VCE(sat) IGBT
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品牌   IXYS [ IXYS CORPORATION ]
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100%
High Voltage,
Low V
CE(sat)
IGBT
Short Circuit SOA Capability
IXSH 45N120
V
CES
I
C25
V
CE(sat)
= 1200 V
= 75 A
= 3V
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
t
SC
(SCSOA)
P
C
T
J
T
JM
T
stg
M
d
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C, limited by leads
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
J
= 125°C, R
G
= 2.7
W
Clamped inductive load, L = 30
mH
V
GE
= 15 V, V
CE
= 0.6 • V
CES
, T
J
= 125°C
R
G
= 22
W,
non repetitive
T
C
= 25°C
Maximum Ratings
1200
1200
±20
±30
75
45
180
I
CM
= 90
@ 0.8 V
CES
10
300
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
ms
TO-247 AD
G
C
E
C = Collector,
TAB = Collector
G = Gate,
E = Emitter,
Features
W
°C
°C
°C
q
q
q
Mounting torque
1.13/10 Nm/lb.in.
q
6
300
g
°C
q
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
q
International standard package
JEDEC TO-247
High frequency IGBT with guaranteed
Short Circuit SOA capability
Fast Fall Time for switching speeds
up to 20 kHz
2nd generation HDMOS
TM
process
Low V
CE(sat)
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
1200
4
T
J
= 25°C
T
J
= 125°C
6
8
400
1.2
±100
3
V
V
Applications
q
q
q
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 3 mA, V
GE
= 0 V
= 4 mA, V
CE
= V
GE
q
q
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
mA
mA
nA
V
AC motor speed control
DC servo and robot drive
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Welding
Advantages
q
q
Easy to mount with 1 screw
(isolated mounting screw hole)
High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
92773F (7/00)
© 2000 IXYS All rights reserved
1-4
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