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IXGH30N60BD1 HiPerFASTTM IGBT with Diode
型号:   IXGH30N60BD1
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描述:   HiPerFASTTM IGBT with Diode
文件大小 :   116 K    5 页
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品牌   IXYS [ IXYS CORPORATION ]
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100%
HiPerFAST
TM
IGBT
with Diode
IXGH 30N60BD1 V
CES
IXGT 30N60BD1 I
C25
V
CE(sat)
t
fi(typ)
= 600 V
=
60 A
=
1.8 V
= 100 ns
Symbol
V
CES
V
CGR
V
GES
V
GEM
I
C25
I
C90
I
CM
SSOA
(RBSOA)
P
C
T
J
T
JM
T
stg
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C; R
GE
= 1 MW
Continuous
Transient
T
C
= 25°C
T
C
= 90°C
T
C
= 25°C, 1 ms
V
GE
= 15 V, T
VJ
= 125°C, R
G
= 10
W
Clamped inductive load, L = 100
mH
T
C
= 25°C
Maximum Ratings
600
600
±20
±30
60
30
120
I
CM
= 60
@ 0.8 V
CES
200
-55 ... +150
150
-55 ... +150
300
1.13/10
TO-247 AD
TO-268
6
4
V
V
V
V
A
A
A
A
W
°C
°C
°C
°C
Nm/lb.in.
g
g
TO-268
(IXGT)
G
E
C (TAB)
TO-247 AD
(IXGH)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
Features
C = Collector,
TAB = Collector
Maximum Lead and Tab temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M
d
Weight
Mounting torque, TO-247 AD
• International standard package
• Moderate frequency IGBT and
antiparallel FRED in one package
• High current handling capability
• Newest generation HDMOS
TM
process
• MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Symbol
Test Conditions
Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
600
2.5
T
J
= 25°C
T
J
= 150°C
5.0
200
3
±100
1.8
V
V
mA
mA
nA
V
BV
CES
V
GE(th)
I
CES
I
GES
V
CE(sat)
I
C
I
C
= 250mA, V
GE
= 0 V
= 250
mA,
V
CE
= V
GE
Advantages
• Space savings (two devices in one
package)
• High power density
• Optimized V
ce(sat)
and switching
speeds for medium frequency
application
V
CE
= 0.8 • V
CES
V
GE
= 0 V
V
CE
= 0 V, V
GE
=
±20
V
I
C
= I
C90
, V
GE
= 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
98510C (7/00)
© 2000 IXYS All rights reserved
1-5
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